Methods for manufacturing thin film transistor and display device

ABSTRACT

The present invention provides a method for manufacturing a thin film transistor with small leakage current and high switching characteristics. In a method for manufacturing a thin film transistor, a back channel portion is formed in the thin film transistor by conducting etching using a resist mask, the resist mask is removed by removal or the like, and a superficial part of the back channel portion is further etched. Through the steps, components of chemical solution used for the removal, residues of the resist mask, and the like which exist at the superficial part of the back channel portion can be removed and leakage current can be reduced. The further etching step of the back channel portion is preferably conducted by dry etching using an N 2  gas or a CF 4  gas with bias not applied.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method for manufacturing a thin filmtransistor. Further, the present invention relates to a method formanufacturing a semiconductor device having the thin film transistor. Asan example of the semiconductor device, a display device is given, inparticular. As an example of the display device, a liquid crystaldisplay device and an EL display device are given.

2. Description of the Related Art

In recent years, thin film transistors formed using a semiconductor thinfilm (having a thickness of about several nanometers to several hundredsof nanometers) formed over a substrate having an insulating surface(e.g., a glass substrate) have been attracting attentions. Thin filmtransistors are widely used for ICs (integrated circuits) and electronicdevices such as electrooptical devices. In particular, thin filmtransistors are urgently developed as switching elements of imagedisplay devices typified by liquid crystal display devices and the like.In an image display device such as a liquid crystal display device, athin film transistor using an amorphous semiconductor film or a thinfilm transistor using a polycrystalline semiconductor film is mainlyused as a switching element.

The thin film transistor using an amorphous semiconductor film has lowmobility, i.e., low current-driving capability. Thus, when a protectioncircuit is formed using a thin film transistor formed using an amorphoussemiconductor film, a large-sized thin film transistor should be formedas a countermeasure against electrostatic breakdown, which leads tohindrance to narrower frame parts. In addition, if a large-sizedtransistor is formed, parasitic capacitance between a scan lineelectrically connected to a gate electrode and a signal lineelectrically connected to a source electrode or a drain electrode mayincrease, and thus power consumption may increase, which is problematic.

On the other hand, a thin film transistor using a polycrystallinesemiconductor film has advantages in that its mobility is greater thanthat of a thin film transistor using an amorphous semiconductor film bytwo or more digits, and a pixel portion of a liquid crystal displaydevice and peripheral driver circuits thereof can be formed over thesame substrate. A process of the thin film transistor using apolycrystalline semiconductor film, however, is more complicated thanthat of the thin film transistor using an amorphous semiconductor film,because of crystallization of a semiconductor film and addition of animpurity element (doping). Therefore, there is a problem of low yieldand high cost. As a method for forming a polycrystalline semiconductorfilm, there is known a technique in which a pulsed excimer laser beam isshaped into a linear beam by an optical system and an amorphoussemiconductor film is scanned to be irradiated with the linear beam sothat the amorphous semiconductor film can be crystallized.

In addition, as a switching element of an image display device, a thinfilm transistor using a microcrystalline semiconductor film is known, aswell as a thin film transistor using an amorphous semiconductor film ora thin film transistor using a polycrystalline semiconductor film (e.g.,see Patent Document 1). As a method for manufacturing a thin filmtransistor using a microcrystalline semiconductor film, a technique isknown in which an amorphous silicon film is formed over a gateinsulating film, a metal film is formed over the amorphous silicon film,and the metal film is irradiated with a diode laser in order to modifythe amorphous silicon film into a microcrystalline silicon film. Withthis manufacturing method, the metal film formed over the amorphoussilicon film only converts light energy of the diode laser into thermalenergy and is removed in a later step. That is, in this method, theamorphous silicon film is heated only by conduction heating from themetal film and the microcrystalline silicon film is formed by this heat(e.g., see Non-Patent Document 1).

In a process for manufacturing the aforementioned thin film transistor,reduction in the number of photomasks used in photolithography isimportant for simplification of the process. For example, if onephotomask is added, the following steps are further needed: resistapplication, prebaking, light exposure, development, postbaking, and thelike and, moreover, steps before and after the aforementioned steps,such as film formation, etching, resist removal, cleaning, drying, andthe like. The number of steps is significantly increased only by addingone photomask in the manufacturing process. Therefore, many techniquesfor reducing the number of photomasks in a manufacturing process havebeen developed. By employing a channel-etch type thin film transistor,the number of photomasks can be reduced.

However, in a channel-etch type thin film transistor, a back channelportion is exposed, which causes leakage current. Thus, it has beendifficult to make off current sufficiently low. Therefore, a variety ofdevices has been made; for example, plasma treatment is performed on theback channel portion (e.g., see Patent Document 2).

CITATION LIST

-   [Patent Document 1] U.S. Pat. No. 4,409,134-   [Patent Document 2] Japanese Published Patent Application No.    H01-144682-   [Non-Patent Document 1] Toshiaki ARAI and others, SID '07 DIGEST,    2007, pp. 1370-1373

SUMMARY OF THE INVENTION

As described above, when a thin film transistor to be used as aswitching element is formed, a photolithography method is generallyemployed. A photolithography method is a technique in which a surface ofa substance to which a photosensitive substance is applied (aphotoresist) is exposed using a photomask in which a circuit pattern orthe like is formed, so that the circuit pattern is transferred and apattern is formed. A resist mask is a photoresist in which a pattern isformed. Photoresists can be classified into a negative type in which theexposed portion remains after development and a positive type in whichthe exposed portion is removed after development.

In a process for manufacturing a thin film transistor using aphotolithography method, a film is etched using a resist mask and theresist mask which is no longer needed is removed by a removal process orthe like. Such a removal process can be performed using a removersolution, for example. A substance included in the remover solution or aresidue of the remaining resist mask exists in a back channel portion orthe like, which causes leakage current.

In a process for removing a resist mask, a remover solution containingphenol, chlorobenzene, or the like as a main component is often used.However, it is difficult to remove the resist mask with phenol,chlorobenzene, or the like alone in many cases, and the photoresist maskthat cannot be removed causes reduction in yield. In order to improvethe capability to remove the resist mask, alkylbenzene sulfonate ispreferably contained in the remover solution.

The present inventors have found that when a thin film transistor ismanufactured using the alkylbenzene sulfonate based remover solution(containing alkylbenzene sulfonate as a main component) after formationof the back channel portion, the off current of the thin film transistoris especially increased. It is considered that this is because the sulfogroup contained in the alkylbenzene sulfonate based remover solution iseasily hydrated (hydrophilicity) and the electron-withdrawing propertyis strong; thus, the presence of the substance including the sulfo groupin a back channel portion increases leakage current. It is an object ofone embodiment of the present invention to provide a method formanufacturing a thin film transistor with suppressed off current, highswitching characteristics, and excellent electric characteristics evenwhen the remover solution containing alkylbenzene sulfonate or the likeis used, for example.

One embodiment of the present invention relates to a method formanufacturing a thin film transistor having a back channel portion, andin the method, after formation of the back channel portion, a resistmask is removed in a removal process using a remover solution or thelike, and an etching process is further conducted (hereinafter alsoreferred to as “slight etching”) in order to remove substances includedin the remover solution, residues of the resist mask, and the like.Here, an etching gas which is capable of effectively removing substancesincluded in the remover solution, residues of the resist mask, and thelike is used for the etching. For example, in the case where thealkylbenzene sulfonate based remover solution is used in the removalprocess, slight etching may be conducted using an N₂ gas or a CF₄ gas.

One embodiment of the present invention is preferably applied especiallyto inversely-staggered thin film transistors. This is because substancesincluded in a remover solution used in a process for removing a resistmask, residues of the resist mask, and the like are left in a backchannel portion in an inversely-staggered thin film transistor in manycases. Accordingly, one embodiment of the present invention is a methodfor manufacturing an inversely-staggered thin film transistor, whereinan impurity semiconductor layer in a portion serving as a channelformation region or a portion overlapping with the channel formationregion is etched, and then dry etching is conducted with thesemiconductor layer exposed in the etched portion under conditions whichmake it possible to effectively remove substances included in theremover solution used in the process for removing the resist mask,residues of the resist mask, and the like. In other words, after a backchannel portion is formed, a resist mask is removed, and then slightetching is conducted under conditions in accordance with substancesincluded in the resist mask, a remover solution used in a process forremoving the resist mask, and the like, which is a feature of thepresent invention.

In the above structure of one embodiment of the present invention, forexample, an amorphous semiconductor layer may be used as thesemiconductor layer. Preferably, a microcrystalline semiconductor layeris used. This is because in a thin film transistor formed using amicrocrystalline semiconductor layer, on current tends to increase.However, there is a problem that the surface of a crystal grain of amicrocrystalline semiconductor layer is easily oxidized. Therefore, inmany cases, an oxide layer is formed on the surface of a crystal grainof a channel formation region. There is a problem that the oxide layerinhibits movement of carries and electric characteristics of the thinfilm transistor deteriorate (e.g., mobility is decreased).

For the above reason, in the case where a microcrystalline semiconductorlayer is used as a semiconductor layer, a buffer layer is preferablyprovided so as to cover the microcrystalline semiconductor layer. Thebuffer layer is formed using an amorphous semiconductor. Themicrocrystalline semiconductor layer and the amorphous semiconductorlayer serving as the buffer layer are preferably formed using the samematerial.

One embodiment of the present invention relates to a method formanufacturing a thin film transistor. The method includes the steps of:forming a back channel portion in the thin film transistor by conductingetching using a resist mask; removing the resist mask using a chemicalsolution containing a hydrophilic group including sulfur; and etching asuperficial part of the back channel portion so that a concentration ofsulfur which exists in the back channel portion is made less than orequal to a detection limit of secondary ion mass spectrometry.

Another embodiment of the present invention relates to a method formanufacturing a thin film transistor. The method includes the steps of:forming a back channel portion in the thin film transistor by conductingetching using a resist mask; removing the resist mask; and etching asuperficial part of the back channel portion using a nitrogen gas or atetrafluoromethane gas.

Another embodiment of the present invention relates to a method formanufacturing a thin film transistor. The method includes the steps of:forming a back channel portion in the thin film transistor by conductingetching using a resist mask; removing the resist mask using a chemicalsolution containing a hydrophilic group including sulfur; and etching asuperficial part of the back channel portion using a nitrogen gas or atetrafluoromethane gas so that a concentration of sulfur which exists inthe back channel portion is made less than or equal to a detection limitof secondary ion mass spectrometry.

Still another embodiment of the present invention relates to a methodfor manufacturing a thin film transistor. The method includes the stepsof: forming a gate insulating layer, a semiconductor layer, and animpurity semiconductor layer over a gate electrode layer; forming afirst resist mask selectively over the impurity semiconductor layer;etching the semiconductor layer and the impurity semiconductor layer sothat an island-shaped semiconductor layer at least part of whichoverlaps with the gate electrode layer is formed; removing the firstresist mask; forming a conductive layer over the gate insulating layerand the island-shaped semiconductor layer; forming a second resist maskselectively over the conductive layer; etching the conductive layer sothat source and drain electrodes are formed; etching the impuritysemiconductor layer of the island-shaped semiconductor layer with thesecond resist mask left so that part of the semiconductor layer isexposed and a back channel portion is formed; removing the second resistmask using a chemical solution containing a hydrophilic group includingsulfur; and etching a superficial part of the back channel portion withthe source and drain electrodes used as masks so that a concentration ofsulfur which exists in the back channel portion is made less than orequal to a detection limit of secondary ion mass spectrometry. Thismethod is referred to as a first method.

Yet another embodiment of the present invention relates to a method formanufacturing a thin film transistor. The method includes the steps of:forming a gate insulating layer, a semiconductor layer, and an impuritysemiconductor layer over a gate electrode layer; forming a first resistmask selectively over the impurity semiconductor layer; etching thesemiconductor layer and the impurity semiconductor layer so that anisland-shaped semiconductor layer at least part of which overlaps withthe gate electrode layer is formed; removing the first resist mask;forming a conductive layer over the gate insulating layer and theisland-shaped semiconductor layer; forming a second resist maskselectively over the conductive layer; etching the conductive layer sothat source and drain electrodes are formed; removing the second resistmask using a chemical solution containing a hydrophilic group includingsulfur; etching the impurity semiconductor layer of the island-shapedsemiconductor layer with the source and drain electrodes used as masksso that part of the semiconductor layer is exposed and a back channelportion is formed; and etching a superficial part of the back channelportion so that a concentration of sulfur which exists in the backchannel portion is made less than or equal to a detection limit ofsecondary ion mass spectrometry.

Further, another embodiment of the present invention relates to a methodfor manufacturing a thin film transistor. The method includes the stepsof: forming a gate insulating layer, a semiconductor layer, an impuritysemiconductor layer, and a conductive layer over a gate electrode layer;forming a first resist mask having a depression portion selectively overthe conductive layer; etching the semiconductor layer, the impuritysemiconductor layer, and the conductive layer so that an island-shapedsemiconductor layer is formed and a conductive layer is formed over thesemiconductor layer and so that the depression portion of the firstresist mask is made to reach the conductive layer, whereby a secondresist mask is formed; etching the conductive layer so that source anddrain electrodes are formed; etching the impurity semiconductor layer ofthe island-shaped semiconductor layer so that part of the semiconductorlayer is exposed and a back channel portion is formed; removing thesecond resist mask using a chemical solution containing a hydrophilicgroup including sulfur; and etching a superficial part of the backchannel portion with the source and drain electrodes used as masks sothat a concentration of sulfur which exists in the back channel portionis made less than or equal to a detection limit of secondary ion massspectrometry.

Furthermore, another embodiment of the present invention relates to amethod for manufacturing a thin film transistor. The method includes thesteps of: forming a gate insulating layer, a semiconductor layer, animpurity semiconductor layer, and a conductive layer over a gateelectrode layer; forming a first resist mask having a depression portionselectively over the conductive layer; etching the semiconductor layer,the impurity semiconductor layer, and the conductive layer so that anisland-shaped semiconductor layer is formed and a conductive layer isformed over the semiconductor layer and so that the depression portionof the first resist mask is made to reach the conductive layer, wherebya second resist mask is formed; etching the conductive layer so thatsource and drain electrodes are formed; removing the second resist maskusing a chemical solution containing a hydrophilic group includingsulfur; etching the impurity semiconductor layer of the island-shapedsemiconductor layer so that part of the semiconductor layer is exposedand a back channel portion is formed; and etching a superficial part ofthe back channel portion with the source and drain electrodes used asmasks so that a concentration of sulfur which exists in the back channelportion is made less than or equal to a detection limit of secondary ionmass spectrometry.

In the above structures of one embodiment of the present invention, thestep of etching the superficial part of the back channel portion ispreferably conducted with bias not applied in a direction perpendicularto a substrate over which the thin film transistor is formed. This isbecause damage to the back channel portion can be reduced.

In the above structures of one embodiment of the present invention, thestep of etching the back channel portion is preferably conducted usingpulsed discharge. This is because damage to the back channel portion canbe further reduced.

In the above structures of one embodiment of the present invention, itis preferable that the semiconductor layer include a stacked layer of amicrocrystalline semiconductor layer and an amorphous semiconductorlayer, and the amorphous semiconductor layer be provided on a side ofthe semiconductor layer with which the impurity semiconductor layer isin contact. The thin film transistor having such a structure issubjected to the etching so that off current can be further reduced.Further, in the thin film transistor having such a structure, acrystalline semiconductor layer (a microcrystalline semiconductor layer)serves as a channel formation region; thus, on current is high.Therefore, a thin film transistor with excellent switchingcharacteristics can be manufactured.

A display device can be manufactured by forming a pixel electrode whichis connected to the source electrode or the drain electrode included inthe thin film transistor manufactured by the methods according to theabove structures. The pixel electrode is preferably formed using aconductive material having a light-transmitting property. Bymanufacturing a display device in such a manner, the contrast ratio ofthe display device is increased; thus, the display device with excellentdisplay quality can be obtained.

In the thin film transistor manufactured by the first method, thesemiconductor layer is formed of a microcrystalline semiconductor layerand an amorphous semiconductor layer. The thin film transistor includesthe gate electrode layer, the gate insulating layer formed so as tocover the gate electrode layer, the semiconductor layer formed over thegate insulating layer, the source and drain regions provided on and incontact with a part of the semiconductor layer, and the source and drainelectrodes provided on and in contact with the source and drain regions.A portion of the amorphous semiconductor layer overlapping with thesource and drain regions is thicker than a portion of the amorphoussemiconductor layer overlapping with a channel formation region. A sideface of the source and drain regions in contact with the source anddrain electrodes exists in the same plane as or substantially the sameplane as a side face of the source and drain electrodes, and a side faceof the source and drain regions in contact with the amorphoussemiconductor layer exists in the same plane as or substantially thesame plane as a side face of the amorphous semiconductor layer. Theconcentration of a substance which causes leakage current in the backchannel portion of the thin film transistor (mainly, a hydrophilicgroup, for example, a sulfo group when the alkylbenzene sulfonate basedremover solution is used) is made less than or equal to the detectionlimit of secondary ion mass spectrometry.

In the above structure, i.e., an inversely-staggered structure in whichthe buffer layer is formed over the microcrystalline semiconductorlayer, on current mainly flows in the microcrystalline semiconductorlayer in the vicinity of the interface between the channel formationregion and the gate insulating layer (a region which is within severaltens of nanometers from the interface), whereas off current mainly flowsin a superficial layer of the channel formation region which is far sidefrom the gate insulating layer (a so-called back channel portion).Because the microcrystalline semiconductor has high mobility, on currentcan be increased, and because the amorphous semiconductor layercontaining hydrogen which serves as the buffer layer corresponds to aback channel portion of the thin film transistor and has highresistance, off current can be decreased. Accordingly, themicrocrystalline semiconductor layer is formed in contact with the gateinsulating layer, the amorphous semiconductor layer is formed in theback channel portion, and the back channel portion is etched afterremoval of the resist mask, whereby a thin film transistor with high oncurrent, low off current, and excellent switching characteristics can bemanufactured.

Further, there is also an advantage that the buffer layer is formedbetween the microcrystalline semiconductor layer and the source anddrain regions as described above. The buffer layer functions as ahigh-resistant region and prevents the microcrystalline semiconductorlayer from being oxidized. Because a depression portion of the bufferlayer is provided between the microcrystalline semiconductor layer andthe source and drain regions, a thin film transistor which has highmobility, small leakage current, and high withstand voltage can bemanufactured. By decreasing leakage current between the source and drainregions of a thin film transistor, off current can be made low. It needsto be noted that sufficient on current cannot be obtained when thedepression portion of the buffer layer is too thick.

In one embodiment of the present invention, when the buffer layer isprovided, dry etching is conducted in a state that the buffer layeroverlapping with the channel formation region is exposed, after theresist mask is removed and the substrate is cleaned after the region towhich an impurity element imparting one conductivity type is added isetched. By provision of the buffer layer, the microcrystallinesemiconductor layer is prevented from being oxidized, and thusdeterioration in electric characteristics of the thin film transistorcan be prevented.

By provision of the buffer layer as described above, even if a processfor a channel-etched transistor, which gives high productivity, isemployed, a thin film transistor with low off current and high switchingcharacteristics can be obtained.

Note that in this specification, as for each layer of stacked films, a“film” and a “layer” are used in an indistinguishable manner in somecases.

Note that in this specification, a deposited microcrystallinesemiconductor layer may be irradiated with laser light so that crystalsare grown, and the microcrystalline semiconductor layer having the growncrystals is referred to as an LPSAS layer.

A thin film transistor having a low off current can be manufactured. Bydecreasing off current, a thin film transistor with small subthresholdswing and excellent switching characteristics can be manufactured. Inother words, a thin film transistor with excellent electriccharacteristics can be manufactured with high yield at low cost. Inaddition, a thin film transistor in which variation in electriccharacteristics between elements over the same substrate is small can bemanufactured.

In particular, in the case where a back channel portion is formed byetching and then a resist mask is removed using the chemical solutioncontaining alkylbenzene sulfonate, the aforementioned effect isparticularly remarkable.

Here, the term “subthreshold swing” is a gate voltage necessary forincreasing a current (subthreshold current) flowing between a sourceelectrode and a drain electrode by one digit, and the smaller asubthreshold swing is, the steeper the slope of the subthreshold currentwith respect to the gate voltage is and the more excellent the switchingcharacteristics are.

In addition, a thin film transistor whose drain current is notinfluenced so much by change in drain voltage can be manufactured.

Further, even in the case where a channel length of a thin filmtransistor is small, off current when an I_(d)−V_(g) curve rises can bemade low.

A thin film transistor of one embodiment of the present invention has asmall subthreshold swing and excellent switching characteristics. Thus,if the thin film transistor is employed for a display device, thecontrast ratio of the display device can be improved and the powerconsumption can be reduced. Moreover, because variation in electriccharacteristics between elements is small, a display device with lessdisplay unevenness can be provided.

Accordingly, by employing a thin film transistor of one embodiment ofthe present invention for a display device, the image quality of thedisplay device can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 illustrates an example of a structure of a thin film transistor;

FIGS. 2A to 2C illustrate an example of a method for manufacturing athin film transistor;

FIGS. 3A to 3C illustrate an example of a method for manufacturing athin film transistor;

FIGS. 4A to 4C illustrate an example of a method for manufacturing athin film transistor;

FIG. 5 is a top view of a plasma CVD apparatus used for manufacturing athin film transistor;

FIG. 6 is a view in which a “taper angle” is defined;

FIGS. 7A to 7C illustrate an example of a method for manufacturing athin film transistor;

FIGS. 8A and 8B illustrate an example of a method for manufacturing athin film transistor;

FIGS. 9A to 9C illustrate an example of a method for manufacturing athin film transistor;

FIGS. 10A to 10C illustrate an example of a method for manufacturing athin film transistor;

FIGS. 11A to 11C illustrate an example of a method for manufacturing athin film transistor;

FIGS. 12A to 12C illustrate an example of a method for manufacturing athin film transistor;

FIGS. 13A to 13C illustrate an example of a method for manufacturing athin film transistor;

FIG. 14 illustrates an example of a structure of a thin film transistor;

FIG. 15 illustrates an example of a structure of a thin film transistor;

FIG. 16 illustrates an example of a structure of a thin film transistor;

FIGS. 17A to 17C illustrate an example of a method for manufacturing athin film transistor;

FIGS. 18A to 18C illustrate an example of a method for manufacturing athin film transistor;

FIG. 19 illustrates a liquid crystal display device;

FIG. 20 illustrates a liquid crystal display device;

FIG. 21 illustrates a liquid crystal display device;

FIG. 22 illustrates a liquid crystal display device;

FIG. 23 illustrates a liquid crystal display device;

FIG. 24 illustrates a liquid crystal display device;

FIG. 25 illustrates a liquid crystal display device;

FIG. 26 illustrates a liquid crystal display device;

FIG. 27 illustrates a liquid crystal display device;

FIG. 28 illustrates a liquid crystal display device;

FIG. 29 illustrates a liquid crystal display device;

FIG. 30 illustrates a liquid crystal display device;

FIG. 31 illustrates a liquid crystal display device;

FIG. 32 illustrates a liquid crystal display device;

FIGS. 33A and 33B illustrate a light-emitting device;

FIGS. 34A to 34C illustrate light-emitting devices;

FIG. 35 is a block diagram illustrating a structure of a display device;

FIGS. 36A and 36B are a top view and a cross-sectional view illustratinga liquid crystal display panel;

FIGS. 37A and 37B are a top view and a cross-sectional view illustratinga light-emitting display panel;

FIGS. 38A to 38C are perspective views of electronic devices;

FIG. 39 illustrates an electronic device;

FIGS. 40A and 40B are graphs showing difference in an I_(d)−V_(g) curvedepending on the kind of the gas used for slight etching;

FIGS. 41A and 41B are graphs showing difference in an I_(d)−V_(g) curvedepending on the kind of the gas used for slight etching;

FIGS. 42A and 42B are graphs showing difference in an I_(d)−V_(g) curvedepending on the kind of the gas used for slight etching;

FIG. 43 is an analysis result of a back channel portion by ToF-SIMS;

FIG. 44 is an analysis result of a back channel portion by ToF-SIMS;

FIGS. 45A and 45B are graphs showing an I_(d)−V_(g) curve of a thin filmtransistor which is not subjected to slight etching and an I_(d)−V_(g)curve of a thin film transistor which is subjected to slight etchingusing a Cl₂ gas, respectively; and

FIGS. 46A and 46B are graphs showing an I_(d)−V_(g) curve of a thin filmtransistor which is subjected to slight etching using a CF₄ gas and anI_(d)−V_(g) curve of a thin film transistor which is subjected to slightetching using an N₂ gas, respectively.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention will be described below withreference to the accompanying drawings. Note that the present inventionis not limited to the following description. It is easily understood bythose skilled in the art that a mode and a detail of the presentinvention can be variously changed unless departing from the scope andspirit of the present invention. Accordingly, the present inventionshould not be interpreted as being limited to the description of theembodiments to be given below. In the description of the presentinvention with reference to the drawings, a reference numeral indicatingthe same part is used in common throughout the drawings. The samehatching pattern is applied to similar parts, and the similar parts arenot especially denoted by reference numerals in some cases. Further, insome cases, an insulating layer is not illustrated in a top view forconvenience.

Embodiment 1

In this embodiment, a method for manufacturing a thin film transistorwhich is one embodiment of the present invention and the thin filmtransistor manufactured by the method will now be described withreference to drawings.

FIG. 1 illustrates a top view and a cross-sectional view of a thin filmtransistor which is one embodiment of the present invention as anexample. The thin film transistor illustrated in FIG. 1 includes a gateelectrode layer 102 over a substrate 100, a gate insulating layer 104over the gate electrode layer 102, a semiconductor layer 106 over thegate insulating layer 104, a buffer layer 108 over the semiconductorlayer 106, source and drain regions 110 over a part of the buffer layer108, source and drain electrode layers 112 over the source and drainregions 110, and an insulating layer 114 over the source and drainelectrode layers 112. Each of the layers is patterned into a desiredshape. The insulating layer 114 serves as a protective layer.

In addition, specifically, the semiconductor layer 106 can be amicrocrystalline semiconductor layer, or a crystalline semiconductorlayer obtained by subjecting a deposited microcrystalline semiconductorlayer to laser processing (also referred to as “LP”), but the layers arenot limiting examples, and the semiconductor layer 106 may have nocrystallinity. Alternatively, a crystalline semiconductor layer typifiedby a polycrystalline semiconductor layer may be used.

In the thin film transistor illustrated in FIG. 1, the source and drainregions 110 provided on and in contact with a part of the buffer layer108 include a portion (a first portion) in contact with the source anddrain electrode layers 112 and a portion (a second portion) in contactwith the buffer layer 108. A portion of the buffer layer 108 overlappingwith the source and drain regions 110 is thicker than a portion of thebuffer layer 108 overlapping with a channel formation region. Further,as illustrated in FIG. 1, an inner side face (a back channel side) ofthe first portion included in the source and drain regions 110 exists inthe same plane as or substantially the same plane as a side face of thesource and drain electrode layers 112, and an inner side face of thesecond portion exists in the same plane as or substantially the sameplane as a side face of the buffer layer 108. The side face of the firstportion and the side face of the second portion may exist on differentplanes.

The thin film transistor illustrated in FIG. 1 is a pixel transistorwhich is provided for a liquid crystal display device (a liquid crystaldisplay panel) in matrix. The source electrode of the thin filmtransistor is connected to a source wiring and the drain electrode isconnected to a pixel electrode layer 118 through an opening portion 116formed in the insulating layer 114.

Note that one of a source electrode and a drain electrode is provided soas to have a shape of surrounding at least the other of the sourceelectrode and the drain electrode (a U shape, a reversed C shape, or ahorseshoe shape). By providing a U-shaped (a reversed C-shaped or ahorseshoe-shaped) thin film transistor, the channel width of the thinfilm transistor can be increased and sufficient on current can flow. Inaddition, variation in electric characteristics can be reduced. However,the present invention is not limited to the U shape, the reversed Cshape, or the horseshoe shape, and the thin film transistor is notnecessarily U-shaped (reversed C-shaped or horseshoe-shaped).

Next, a method for manufacturing the thin film transistor illustrated inFIG. 1 is described with reference to drawings. Note that an n-channelthin film transistor having a microcrystalline semiconductor layer has ahigher mobility of carriers than a p-channel thin film transistor havinga microcrystalline semiconductor layer. It is preferable that all thinfilm transistors formed over the same substrate have the same polaritybecause the number of manufacturing steps can be reduced. Therefore,here, a method for manufacturing an n-channel thin film transistor isdescribed.

First, the gate electrode layer 102 is formed over the substrate 100. Asthe substrate 100, any of the following substrates can be used: analkali-free glass substrate formed of barium borosilicate glass,aluminoborosilicate glass, aluminosilicate glass, or the like by afusion method or a float method; a ceramic substrate; a plasticsubstrate having heat resistance enough to withstand a processtemperature of this manufacturing process; and the like. Alternatively,a metal substrate of a stainless alloy or the like with its surfaceprovided with an insulating layer may be used. That is, a substratehaving an insulating surface is used as the substrate 100. When thesubstrate 100 is a mother glass, the substrate may have any size of fromthe first generation (e.g., 320 mm×400 mm) to the tenth generation(e.g., 2950 mm×3400 mm).

The gate electrode layer 102 is formed using a metal material such astitanium, molybdenum, chromium, tantalum, tungsten, aluminum, copper,neodymium, or scandium or an alloy material which includes any of thesematerials as a main component. In the case of using aluminum, an Al—Taalloy in which aluminum is alloyed with tantalum added thereto ispreferably used because hillocks are suppressed. Alternatively, an Al—Ndalloy in which aluminum is alloyed with neodymium added thereto is morepreferably used because a wiring with low resistance can be formed andhillocks are suppressed. Alternatively, a semiconductor layer typifiedby polycrystalline silicon doped with an impurity element such asphosphorus, or an AgPdCu alloy may be used. The gate electrode layer 102may have either a single-layer structure or a stacked-layer structure.For example, a two-layer structure in which a molybdenum layer isstacked over an aluminum layer, a two-layer structure in which amolybdenum layer is stacked over a copper layer, or a two-layerstructure in which a titanium nitride layer or a tantalum nitride layeris stacked over a copper layer is preferable. When a metal layerfunctioning as a barrier layer is stacked over a layer with low electricresistance, electric resistance can be reduced and a metal element fromthe metal layer can be prevented from diffusing into the semiconductorlayer. Alternatively, a two-layer structure including a titanium nitridelayer and a molybdenum layer, or a three-layer structure in which atungsten layer having a thickness of 50 nm, an alloy layer of aluminumand silicon having a thickness of 500 nm, and a titanium nitride layerhaving a thickness of 30 nm may be used. When the three-layer structureis used, tungsten nitride may be used instead of tungsten of the firstconductive layer, an alloy layer of aluminum and titanium may be usedinstead of the alloy layer of aluminum and silicon of the secondconductive layer, or a titanium layer may be used instead of thetitanium nitride layer of the third conductive layer. For example, whena molybdenum layer is stacked over an Al—Nd alloy layer, a conductivelayer which has excellent heat resistance and low electric resistancecan be formed.

The gate electrode layer 102 can be formed in such a manner that aconductive layer is formed over the substrate 100 by a sputtering methodor a vacuum evaporation method, a mask is formed over the conductivelayer by a photolithography method or an inkjet method, and theconductive layer is etched using the mask. Alternatively, the gateelectrode layer 102 can be formed by discharging a conductive nanopasteof silver, gold, copper, or the like over the substrate by an inkjetmethod and baking the conductive nanopaste. Note that as a barrier metalfor increasing adhesion between the gate electrode layer 102 and thesubstrate 100 and preventing diffusion of a material used for the gateelectrode layer 102 to a base, a nitride layer of any of theaforementioned metal materials may be provided between the substrate 100and the gate electrode layer 102. Here, the gate electrode layer 102 isformed by forming the conductive layer over the substrate 100 andetching the conductive layer by using a resist mask formed using aphotomask.

Note that because a semiconductor layer and a source wiring (a signalline) are formed over the gate electrode layer 102 in later steps, thegate electrode layer 102 is preferably processed so that a side facethereof is tapered in order to prevent disconnection at a step portion.In addition, in this step, a gate wiring (a scan line) can be formed atthe same time. Further, a capacitor line included in a pixel portion canalso be formed. Note that a “scan line” refers to a wiring to select apixel.

Next, the gate insulating layer 104 is formed to cover the gateelectrode layer 102, the microcrystalline semiconductor layer, theamorphous semiconductor layer, and the impurity semiconductor layer aresequentially formed over the gate insulating layer 104. Note that atleast the gate insulating layer 104, the microcrystalline semiconductorlayer and the amorphous semiconductor layer are preferably formedsuccessively. More preferably, the impurity semiconductor layer is alsoformed successively following the above layers. At least the gateinsulating layer 104, the microcrystalline semiconductor layer and theamorphous semiconductor layer are formed successively without beingexposed to air, and thus each interface of stacked layers can be formedwithout being contaminated by an atmospheric constituent or acontaminant impurity element floating in the atmosphere. Thus,variations in electric characteristics of thin film transistors can bereduced, and a thin film transistor having high reliability can bemanufactured with high yield.

The gate insulating layer 104 can be formed using silicon oxide, siliconnitride, silicon oxynitride, or silicon nitride oxide by a CVD method, asputtering method, or the like. The gate insulating layer 104 may haveeither a single-layer structure or a stacked-layer structure of theaforementioned materials. As the gate insulating layer 104, a siliconnitride layer or a silicon nitride oxide layer, and a silicon oxidelayer or a silicon oxynitride layer is preferably stacked from thesubstrate side in this order. This is because the silicon nitride layerand the silicon nitride oxide layer have a high effect of preventing animpurity element contained in the substrate 100 from entering thesemiconductor layer 106 if the impurity element is contained in thesubstrate 100, and when the semiconductor layer 106 is amicrocrystalline semiconductor layer, the silicon oxide layer and thesilicon oxynitride layer have excellent properties of an interface withthe microcrystalline semiconductor layer. Alternatively, as the gateinsulating layer 104, a silicon oxide layer or a silicon oxynitridelayer, a silicon nitride layer or a silicon nitride oxide layer, and asilicon oxide layer or a silicon oxynitride layer may be formed from thesubstrate side in this order. Alternatively, the gate insulating layer104 may be formed of a single layer of a silicon oxide layer, a siliconnitride layer, a silicon oxynitride layer, or a silicon nitride oxidelayer. Further, the gate insulating layer 104 is preferably formed byusing a microwave plasma CVD method with a frequency of 1 GHz. A siliconoxynitride layer or a silicon nitride oxide layer formed by a microwaveplasma CVD method has high withstand voltage because of its dense filmquality, and reliability of a thin film transistor can be improved.

The gate insulating layer 104 preferably has a two-layer structure inwhich a silicon oxynitride layer is stacked over a silicon nitride oxidelayer. This gate insulating layer 104 is formed to a thickness of 50 nmor more, preferably 50 nm to 400 nm, inclusive, more preferably 150 nmto 300 nm, inclusive. The use of a silicon nitride oxide layer canprevent alkali metal or the like contained in the substrate 100 frommixing into the semiconductor layer 106. Further, a silicon oxynitridelayer can prevent hillocks which can be generated in the case of usingaluminum for the gate electrode layer 102 and also prevents the gateelectrode layer 102 from being oxidized.

Note that the term “silicon oxynitride” refers to a substance whichcontains more oxygen than nitrogen and contains oxygen, nitrogen,silicon, and hydrogen at concentrations ranging from 55 at. % to 65 at.%, 1 at. % to 20 at. %, 25 at. % to 35 at. %, and 0.1 at. % to 10 at. %,respectively. Further, the term “silicon nitride oxide” refers to asubstance which contains more nitrogen than oxygen and contains oxygen,nitrogen, silicon, and hydrogen at concentrations ranging from 15 at. %to 30 at. %, 20 at. % to 35 at. %, 25 at. % to 35 at. %, and 15 at. % to25 at. %, respectively.

In the case where the semiconductor layer 106 is a layer obtained byconducting laser process (LP) to a microcrystalline semiconductor layer,after the gate insulating layer 104 is formed and before themicrocrystalline semiconductor layer is formed, a layer for increasingadhesion of the microcrystalline semiconductor layer and preventing themicrocrystalline semiconductor layer from being oxidized by LP ispreferably formed over the gate insulating layer 104. As such a layerfor preventing oxidation, for example, a stacked layer in which asilicon oxynitride layer is interposed between silicon nitride layerscan be given. In the case where the semiconductor layer 106 is formed byconducting the LP to a microcrystalline semiconductor layer, throughthis step, adhesion of the semiconductor layer 106 formed over thestacked layer can be increased and the semiconductor layer 106 can beprevented from being oxidized at the time of LP.

The semiconductor layer 106 serves as the channel formation region ofthe thin film transistor. In the case where the semiconductor layer 106is a microcrystalline semiconductor layer, a microcrystallinesemiconductor layer including a semiconductor material having anintermediate structure between amorphous and crystalline structures(including a single crystal and a polycrystal) is formed. Further, themicrocrystalline semiconductor layer is subjected to LP so that itselectric characteristics can be improved.

A microcrystalline semiconductor is a semiconductor which has a thirdstate which is stable in terms of free energy, may be a crystallinesemiconductor which has a short-range order and lattice distortion, hascrystal grains with a diameter of greater than or equal to several nmand less than or equal to 20 nm, and can be dispersed in an amorphoussemiconductor. Microcrystalline silicon, which is a typical example of amicrocrystalline semiconductor, has a Raman spectrum which is shifted toa wave number side lower than 520.6 cm⁻¹ that features single-crystalsilicon. That is, the peak of a Raman spectrum of microcrystallinesilicon is within the range of from 481 cm⁻¹ to 520.6 cm⁻¹, inclusive.In addition, microcrystalline silicon preferably contains hydrogen orhalogen of at least 1 at. % or more in order to terminate a danglingbond. Such a microcrystalline semiconductor layer is disclosed in, forexample, Patent Document 1.

Note that when the full width at half maximum (FWHM) of the peak of aRaman spectrum is used, the grain size of a crystal grain contained in amicrocrystalline semiconductor layer can be calculated. However, it canbe considered that the shape of a crystal grain which is actuallycontained in a microcrystalline semiconductor layer is not a roundshape.

As a preferred mode of the microcrystalline semiconductor layer, anLPSAS layer can be given, which is obtained by a process in which amicrocrystalline silicon (also referred to as “semi-amorphous silicon”,“SAS”) layer is deposited over the gate insulating layer, and a surfaceside of this layer is irradiated with laser light. The LPSAS layer isdescribed below.

The laser beam can act on the interface between the amorphous siliconlayer and the gate insulating layer. Accordingly, using the crystals onthe surface side of the amorphous silicon layer as nuclei, crystalgrowth advances from the surface toward the interface with the gateinsulating layer, and roughly columnar-like crystals grow. The crystalgrowth by the LP is not to increase the size of crystal grains butrather to improve crystallinity in the thickness direction of the layer.

In the LP, for example, an amorphous silicon layer formed over a glasssubstrate of 730 mm×920 mm can be processed by one scanning of a laserbeam when a laser beam is condensed in a long rectangular shape (alinear laser beam). In such a case, an overlap rate of the linear laserbeams overlapped may be 0% to 98%, preferably 85% to 95%. Accordingly,the length of processing time for each substrate can be shortened, andproductivity can be increased. Note that the shape of the laser beam isnot limited to a linear shape, and may be planar. In addition, the LPcan be applied to a substrate having a wide variety of sizes, withoutany particular limitations on the size of the substrate used. By the LP,the crystallinity in the vicinity of the interface between themicrocrystalline semiconductor layer and the gate insulating layer isimproved, whereby an effect of improving electric characteristics of athin film transistor having a bottom-gate structure can be given.

By the aforementioned growth, unevenness (referred to as a “ridge”, andis a convex portion) of a surface generated in a conventionallow-temperature polysilicon is not produced and thus excellentsmoothness of silicon surface which has been subjected to LP can bekept. Note that in the case of low temperature polysilicon, if a gateelectrode exists directly under the semiconductor layer, ridges are notproduced in the semiconductor layer in many cases.

As in this embodiment, a crystalline silicon layer obtained by directirradiation on a deposited amorphous silicon layer with a laser beam isdistinctly different in growth mechanism and film quality from aconventional as-deposited microcrystalline silicon layer and amicrocrystalline silicon layer which is modified by conduction heating(one disclosed in Non-Patent Document 1). However, the present inventionis not limited to this, and a thin film transistor includingmicrocrystalline silicon disclosed in Non-Patent Document 1 or the likemay be employed.

In addition, the carrier mobility of a microcrystalline semiconductorlayer is about greater than or equal to 1 cm²/V·sec and less than orequal to 20 cm²/V·sec, and the carrier mobility is about greater than orequal to two times and less than or equal to twenty times the carriermobility of a thin film transistor formed using an amorphoussemiconductor layer. Thus, a thin film transistor formed using amicrocrystalline semiconductor layer has steeper rising in acurrent-voltage curve where a horizontal axis represents a gate voltageand a vertical axis represents a drain current, than a thin filmtransistor formed using an amorphous semiconductor layer. In this case,a “gate voltage” indicates a potential difference between a sourceelectrode and a gate electrode, and a “drain current” indicates acurrent flowing between the source electrode and a drain electrode.Therefore, a thin film transistor using a microcrystalline semiconductorlayer for a channel formation region has a high on current, is superiorin response as a switching element, and can operate at high speed. Thus,with the use of a thin film transistor whose channel formation region isformed of the microcrystalline semiconductor layer for a switchingelement of a display device, the area of the channel formation region,that is, the area of the thin film transistor can be decreased. Further,some or all of driver circuits are formed over the same substrate as thepixel portion, whereby system-on-panel can also be achieved.

The microcrystalline semiconductor layer can be formed directly over thesubstrate by a high-frequency plasma CVD method with a frequency ofgreater than or equal to several tens and less than or equal to severalhundreds of megahertz or a microwave plasma CVD method with a frequencyof 1 GHz or more. Typically, the microcrystalline semiconductor layercan be formed using a dilution of silicon hydride such as SiH₄ or Si₂H₆with hydrogen. With dilution of silicon hydride and hydrogen with one orplural kinds of rare gas elements selected from helium, argon, krypton,or neon, the microcrystalline semiconductor layer can be formed. In thiscase, the flow rate of hydrogen to silicon hydride is 5:1 to 200:1,preferably, 50:1 to 150:1, more preferably, about 100:1. Note thatinstead of silicon hydride, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄, or the likecan be used. In addition, a layer formed by a microwave plasma CVDmethod with a frequency of 1 GHz or more has high electron density, andhydrogenated silicon serving as a source gas can be easily dissociated.Thus, as compared with a high frequency plasma CVD method with afrequency of greater than or equal to several tens of megahertz and lessthan or equal to several hundreds of megahertz, a microcrystallinesemiconductor layer can be easily formed, a deposition rate can beincreased, and productivity can be increased by such a microwave plasmaCVD method.

A microcrystalline semiconductor layer exhibits weak n-type conductivitywhen an impurity element for valence control is not added. Thus, thethreshold voltage V_(th) can be controlled by adding an impurity elementimparting p-type conductivity to a microcrystalline semiconductor layerwhich functions as a channel formation region of a thin film transistorat the same time as or after the film formation of the microcrystallinesemiconductor layer. A typical example of an impurity element impartingp-type conductivity is boron, and an impurity gas such as B₂H₆ or BF₃may be mixed into silicon hydride at a proportion of 1 ppm to 1000 ppm,preferably, 1 ppm to 100 ppm. The concentration of boron in themicrocrystalline semiconductor layer may be, for example, 1×10¹⁴atoms/cm³ to 6×10¹⁶ atoms/cm³.

In addition, the oxygen concentration of the microcrystallinesemiconductor layer is preferably 1×10¹⁹ atoms/cm³ or less, morepreferably 5×10¹⁸ atoms/cm³ or less and the nitrogen concentration andthe carbon concentration are preferably 5×10¹⁸ atoms/cm³ or less, morepreferably 1×10¹⁸ atoms/cm³ or less. When concentrations of oxygen,nitrogen, and carbon to be mixed into the microcrystalline semiconductorlayer are decreased, a channel formation region of the microcrystallinesemiconductor layer can be prevented from being changed into an n-typesemiconductor. Further, when the concentrations of these elements arevaried among elements, variations in the threshold voltage V_(th) mayoccur. Thus, when these concentrations are decreased as much aspossible, variations in the threshold voltage V_(th) between elementsformed over the substrate can be reduced.

In the case the semiconductor layer 106 is a microcrystallinesemiconductor layer, it is formed to a thickness of 2 nm to 60 nminclusive, preferably 10 nm to 30 nm inclusive. When the thickness ofthe microcrystalline semiconductor layer is in the range of 2 nm to 60nm inclusive, a thin film transistor can be made a fully depleted type.In addition, because the formation rate of the microcrystallinesemiconductor layer is low, i.e., a tenth to a hundredth of theformation rate of an amorphous semiconductor layer, the semiconductorlayer 106 is preferably formed thinly so that throughput can beimproved.

An amorphous semiconductor layer or an amorphous semiconductor layercontaining hydrogen, nitrogen, or halogen is formed over a surface ofthe semiconductor layer 106, and thus the surfaces of crystal grainsincluded in the semiconductor layer 106 can be prevented from beingnatively oxidized.

However, the microcrystalline semiconductor layer and the LPSAS layerhave a problem of high off current.

For the reason, the buffer layer 108 is preferably formed so as to coverthe semiconductor layer 106. When the buffer layer 108 is provided, thenative oxidation of the surfaces of crystal grains can be preventedwithout providing a layer for preventing the native oxidation of crystalgrains for the surface of the semiconductor layer 106.

The buffer layer 108 can be formed by forming an amorphous semiconductorlayer using the same material as that of the semiconductor layer 106,and etching the amorphous semiconductor layer to be patterned. In thecase of using silicon for the amorphous semiconductor layer, theamorphous semiconductor layer can be formed using silicon hydride suchas SiH₄ or Si₂H₆ by a plasma CVD method. Alternatively, with a dilutionof silicon hydride described above with one or plural kinds of rare gaselements selected from helium, argon, krypton, and neon, the amorphoussemiconductor layer can be formed. When hydrogen at a flow rate which is1 to 20 times, preferably 1 to 10 times, more preferably 1 to 5 times ashigh as that of silicon hydride is used, a hydrogen-containing amorphoussemiconductor layer can be formed. When a mixed gas of silicon hydridedescribed above and nitrogen or ammonia is used, a nitrogen-containingamorphous semiconductor layer can be formed. When silicon hydridedescribed above and a gas including fluorine, chlorine, bromine, oriodine (F₂, Cl₂, Br₂, I₂, HF, HCl, HBr, HI, or the like) are used, anamorphous semiconductor layer including fluorine, chlorine, bromine, oriodine can be formed. Note that instead of silicon hydride, SiH₂Cl₂,SiHCl₃, SiCl₄, SiF₄, or the like can be used. Note that the thickness ofthe amorphous semiconductor layer is 100 nm to 500 nm inclusive,preferably 150 nm to 400 nm inclusive, more preferably 200 nm to 300 nminclusive.

Alternatively, the buffer layer 108 may be formed using an amorphoussemiconductor layer formed by sputtering in a hydrogen gas or in a raregas using an amorphous semiconductor as a target. In this case, whenammonia, nitrogen, or dinitrogen monoxide is contained in theatmosphere, a nitrogen-containing amorphous semiconductor layer can beformed. Alternatively, when a gas including fluorine, chlorine, bromine,or iodine (F₂, Cl₂, Br₂, I₂, HF, HCl, HBr, HI, or the like) is containedin the atmosphere, an amorphous semiconductor layer including fluorine,chlorine, bromine, or iodine can be formed.

Alternatively, the buffer layer 108 may be formed by forming anamorphous semiconductor layer on the surface of the semiconductor layer106 by a plasma CVD method or a sputtering method and then by performinghydrogenation, nitridation, or halogenation of the surface of theamorphous semiconductor layer through processing of the surface of theamorphous semiconductor layer with hydrogen plasma, nitrogen plasma, orhalogen plasma. Alternatively, the surface of the amorphoussemiconductor layer may be processed with helium plasma, neon plasma,argon plasma, krypton plasma, or the like.

Although the buffer layer 108 is formed using an amorphous semiconductorlayer, preferably, the amorphous semiconductor layer does not containcrystal grains. Therefore, in the case where the buffer layer 108 isformed by a high-frequency plasma CVD method with a frequency of severaltens to several hundreds of megahertz or a microwave plasma CVD method,the amorphous semiconductor layer is formed in order not to containcrystal grains.

Note that the buffer layer 108 should be formed in such a way that animpurity element imparting one conductivity type, such as phosphorus orboron are not added to the buffer layer 108. In particular, preferably,boron added to the semiconductor layer 106 for controlling the thresholdvoltage or phosphorus contained in the source and drain regions 110 isnot mixed into the buffer layer 108. For example, if the semiconductorlayer 106 contains boron and the buffer layer 108 contains phosphorus, aPN junction may be formed between the semiconductor layer 106 and thebuffer layer 108. In addition, if the buffer layer 108 contains boronand the source and drain regions 110 contain phosphorus, a PN junctionmay be formed between the buffer layer 108 and the source and drainregions 110. Alternatively, if the buffer layer 108 contains both boronand phosphorus, a recombination center is generated, which causesleakage current. When the buffer layer 108 does not contain such animpurity element imparting one conductivity type, leakage current can bereduced. When the buffer layer 108 which does not contain an impurityelement such as phosphorus or boron is provided between the source anddrain regions 110 and the semiconductor layer 106, the impurity elementcan be prevented from entering the semiconductor layer 106 serving as achannel formation region and the source and drain regions 110.

The buffer layer 108 may be formed using an amorphous semiconductorcontaining hydrogen, nitrogen, or halogen. An amorphous semiconductorhas a larger energy gap than a microcrystalline semiconductor (theenergy gap of an amorphous semiconductor is 1.6 eV to 1.8 eV inclusiveand the energy gap of a microcrystalline semiconductor is 1.1 eV to 1.5eV inclusive), has higher electric resistance, and has lower mobility (afifth to a tenth of that of a microcrystalline semiconductor).Therefore, in a thin film transistor to be formed, preferably, thebuffer layer 108 formed between the source and drain regions 110 and thesemiconductor layer 106 functions as a high-resistant region, and thesemiconductor layer 106 functions as a channel formation region.Therefore, off current of the thin film transistor can be reduced. Whensuch a thin film transistor is used as a switching element of a liquidcrystal display device, the contrast of the liquid crystal displaydevice can be improved.

If the semiconductor layer 106 is oxidized, the mobility of the thinfilm transistor is decreased, the subthreshold swing thereof isincreased, and thus electric characteristics of the thin film transistorbecome worse. The buffer layer 108 is formed so as to cover the surfaceof the semiconductor layer 106, and thus crystal grains (especially, thesurface thereof) of the microcrystalline semiconductor layer can beprevented from being oxidized, which leads to suppression of thedeterioration of electric characteristics of the thin film transistor.Either hydrogen or fluorine, or both hydrogen and fluorine are containedin a depression portion of the buffer layer 108 (a portion overlappingthe channel formation region of the semiconductor layer 106 (a backchannel portion)), and thus oxygen can be effectively prevented frompenetrating the buffer layer 108. Thus, oxidation of the semiconductorlayer 106 can be prevented more effectively.

The source and drain regions 110 can be formed as follows: an impuritysemiconductor layer is formed and then etched. If an n-channel thin filmtransistor is formed, typically phosphorus may be used as an impurityelement, and when a gas including an impurity element imparting ann-type conductivity such as PH₃ is added to hydrogenated silicon, then-channel thin film transistor can be formed. If a p-channel thin filmtransistor is formed, typically boron may be added as an impurityelement, and when a gas including an impurity element imparting a p-typeconductivity such as B₂H₆ is added to hydrogenated silicon, thep-channel thin film transistor can be formed. The source and drainregions 110 can be formed using a microcrystalline semiconductor or anamorphous semiconductor. The source and drain regions 110 are formedwith a thickness of 2 nm to 60 nm, inclusive. In other words, thethickness may be in the same degree as that of the semiconductor layer106. When the source and drain regions 110 are thinned, throughput canbe increased.

Note that as described above, all layers of from the gate insulatinglayer to the impurity semiconductor layer are preferably formedsuccessively. Here, a microwave plasma CVD apparatus, with which fromthe gate insulating layer to the impurity semiconductor layer can beformed successively, is described with reference to FIG. 5, for example.FIG. 5 is a schematic diagram showing a top cross section of a microwaveplasma CVD apparatus, which includes a loading chamber 200, an unloadingchamber 205, and first to fourth reaction chambers 201 to 204 around acommon chamber 210 illustrated in the center. Between the common chamber210 and the other chambers, gate valves 212 to 217 are provided so thatprocesses performed in the chambers do not interfere with each other.Substrates are loaded into a cassette 218 in the loading chamber 200 anda cassette 219 in the unloading chamber 205 and carried to the first tofourth reaction chambers 201 to 204 with a transport means 211 of thecommon chamber 210. In this apparatus, a reaction chamber can beallocated for each different kind of deposition films, and a pluralityof different films can be formed successively without being exposed toair.

In each of the first to fourth reaction chambers 201 to 204, all layersof from the gate insulating layer to the impurity semiconductor layerare stacked. In this case, a plurality of layers of different kinds canbe stacked successively by changing of source gases. In this case, afterthe gate insulating layer is formed, silicon hydride such as silane isintroduced into the reaction chambers, residual oxygen and siliconhydride are reacted with each other, and the reactant is exhausted fromthe reaction chamber, so that the concentration of residual oxygen inthe reaction chamber can be decreased. Accordingly, the concentration ofoxygen contained in the semiconductor layer 106 can be decreased. Inaddition, crystal grains contained in the semiconductor layer 106 can beprevented from being oxidized.

Alternatively, the insulating layer, the microcrystalline semiconductorlayer, and the amorphous semiconductor layer are formed in each of thefirst reaction chamber 201 and the third reaction chamber 203, and thesource and drain regions 110 are formed in each of the second reactionchamber 202 and the fourth reaction chamber 204. By forming the sourceand drain regions 110 alone, an impurity element imparting oneconductivity type which remains in the chamber can be prevented frombeing mixed into another layer.

When a microwave plasma CVD apparatus to which a plurality of chambersis connected as illustrated in FIG. 5 is used, from the gate insulatinglayer to the impurity semiconductor layer can be formed successively.Thus, mass productivity (yield) can be improved. In addition, even whenmaintenance or cleaning is performed on any of reaction chambers, a filmformation process can be performed in other reaction chambers, so thattake time for film formation can be shortened. Further, each interfacebetween stacked layers can be formed without being contaminated by anatmospheric constituent or a contaminant impurity element floating inthe atmosphere. Thus, variations in electric characteristics of thinfilm transistors can be reduced.

Alternatively, the insulating layer can be formed in the first reactionchamber 201, the microcrystalline semiconductor layer and the amorphoussemiconductor layer can be formed in the second reaction chamber 202,and the source and drain regions 110 can be formed in the third reactionchamber 203. Alternatively, because the formation rate of amicrocrystalline semiconductor layer is low, microcrystallinesemiconductor layers may be formed in a plurality of reaction chambers.For example, the gate insulating layer may be formed in the firstreaction chamber 201, the microcrystalline semiconductor layers may beformed in the second reaction chamber 202 and the third reaction chamber203, the amorphous semiconductor layer may be formed in the fourthreaction chamber 204, and the impurity semiconductor layer may be formedin a fifth reaction chamber (not illustrated). In this manner, when themicrocrystalline semiconductor layers are formed at the same time in aplurality of reaction chambers, throughput on manufacturing thin filmtransistors can be improved. In this case, the inner wall of eachreaction chamber is preferably coated with a film of the same kind as afilm to be formed therein.

When a microwave plasma CVD apparatus having the structure illustratedin FIG. 5 is used, layers with similar kinds of compositions or a layerwith one kind of composition can be formed in each reaction chamber andcan be formed successively without being exposed to air. Therefore,stacked layers can be formed without contamination of each interfacethereof by a residue of formed layers or an impurity element floating inthe atmosphere.

Note that the microwave plasma CVD apparatus illustrated in FIG. 5 isprovided with the loading chamber and the unloading chamber separately,which may be a single loading/unloading chamber. In addition, themicrowave plasma CVD apparatus may be provided with a spare chamber.When a substrate is preheated in the spare chamber, heating time neededbefore film formation in each reaction chamber can be shortened. Thus,throughput can be improved.

Next, a film formation process is described specifically. In the filmformation process, a gas to be supplied from a gas supply portion may beselected depending on the purpose.

Here, a case where the gate insulating layer 104 is formed with atwo-layer structure is described. A method in which a silicon oxynitridelayer is formed and a silicon nitride oxide layer is formed over thesilicon oxynitride layer, as the gate insulating layer 104, is describedas an example.

First, the inside of a processing container in a reaction chamber of themicrowave plasma CVD apparatus is cleaned with fluorine radicals. Notethat the inside of the reaction chamber can be cleaned by introducing,into the reaction chamber, fluorine radicals, which are generated byintroducing a gas of carbon fluoride, nitrogen fluoride, or fluorineinto a plasma generator provided outside the reaction chamber anddissociating the gas.

When a large amount of hydrogen is introduced into the reaction chamberafter the inside of the reaction chamber is cleaned with fluorineradicals, residual fluorine inside the reaction chamber can be reactedwith hydrogen, so that the concentration of residual fluorine can bedecreased. Thus, the amount of fluorine to be mixed into a protectivelayer which is to be formed later on the inner wall of the reactionchamber can be decreased, and the thickness of the protective layer canbe decreased.

Next, on the surface of the inner wall of the processing container inthe reaction chamber, or the like, a silicon oxynitride layer isdeposited as the protective layer. Here, the pressure in the processingcontainer is greater than or equal to 1 Pa and less than or equal to 200Pa, preferably greater than or equal to 1 Pa and less than or equal to100 Pa, and one or more kinds of rare gases such as helium, argon,xenon, and krypton is/are introduced as a plasma ignition gas. Further,hydrogen is introduced in addition to any one kind of the aforementionedrare gases. In particular, a helium gas is preferable as a plasmaignition gas, more preferably, a mixed gas of helium and hydrogen isused as a plasma ignition gas.

Although helium has a high ionization energy of 24.5 eV, it has ametastable state at about 20 eV. Thus, helium can be ionized at about 4eV during discharge. Therefore, a discharge starting voltage is low anddischarge can be maintained easily. Accordingly, generated plasma can bemaintained uniformly, and power can be saved.

Alternatively, as the plasma ignition gas, an oxygen gas may be furtherintroduced. When an oxygen gas as well as a rare gas is introduced intothe processing container, plasma ignition can be facilitated.

Next, a microwave generating apparatus is turned on and the output ofthe microwave generating apparatus is greater than or equal to 500 W andless than or equal to 6000 W, preferably greater than or equal to 4000 Wand less than or equal to 6000 W to generate plasma. Then, a source gasis introduced into the processing container through a gas pipe.Specifically, when silane, dinitrogen monoxide, and ammonia areintroduced as source gases, a silicon nitride oxide layer is formed asthe protective layer on the inner wall of the processing container andon the surfaces of the gas pipe, a dielectric plate, and a support base.Note that nitrogen may be introduced as a source gas instead of ammonia.The protective layer is formed to have a thickness of 500 nm to 2000 nm.

Next, supply of the source gas is stopped, the pressure in theprocessing container is decreased, and the microwave generatingapparatus is turned off. After that, a substrate is introduced onto thesupport base in the processing container.

Next, through a process which is similar to that of the protectivelayer, a silicon oxynitride layer is deposited over the substrate as thegate insulating layer 104.

After the silicon oxynitride layer is deposited to a predeterminedthickness, supply of the source gas is stopped, the pressure in theprocessing container is decreased, and the microwave generatingapparatus is turned off.

Next, the pressure in the processing container is 1 Pa to 200 Painclusive, preferably 1 Pa to 100 Pa inclusive, and one or more kinds ofrare gases such as helium, argon, xenon, and krypton as a plasmaignition gas, and dinitrogen monoxide, a rare gas, and silane as sourcegases are introduced. Then, the microwave generating apparatus is turnedon, and the output of the microwave generating apparatus is 500 W to6000 W inclusive, preferably 4000 W to 6000 W inclusive to generateplasma. Next, the source gas is introduced into the processing containerthrough the gas pipe, and a silicon oxynitride layer is formed over thesilicon nitride oxide layer over the substrate. Then, supply of thesource gas is stopped, the pressure in the processing container isdecreased, the microwave generating apparatus is turned off, and thefilm formation process is finished.

Through the aforementioned process, the silicon nitride oxide layer isformed as the protective layer on the inner wall of the reactionchamber, and the silicon nitride oxide layer and the silicon oxynitridelayer are successively formed over the substrate, so that mixture of animpurity element into the silicon oxynitride layer on the upper layerside can be suppressed. When the aforementioned layers are formed by amicrowave plasma CVD method using a power supply apparatus capable ofgenerating a microwave, plasma density can be made higher and denselayers are formed. Therefore, films having high withstand voltage can beformed. When the films are used as gate insulating layers of thin filmtransistors, variations in the threshold voltage of the thin filmtransistors can be suppressed. In addition, the number of defectsmeasured by bias temperature (BT) test can be reduced so that yield canbe improved. Further, resistance to static electricity is increased, anda thin film transistor which is not easily damaged even when highvoltage is applied thereto can be manufactured. Furthermore, a thin filmtransistor which is not easily damaged over time can be manufactured.Moreover, a thin film transistor with few hot carrier damages can bemanufactured.

In the case where the gate insulating layer 104 is formed with a singlelayer of the silicon oxynitride layer formed using the microwave plasmaCVD apparatus, the aforementioned formation method of the protectivelayer and the formation method of the silicon oxynitride layer are used.In particular, when the flow ratio of dinitrogen monoxide to silane is100:1 to 300:1, preferably 150:1 to 250:1, a silicon oxynitride layerhaving high withstand voltage can be formed.

Next, a film formation process is described in which a microcrystallinesemiconductor layer formed by a microwave plasma CVD method and anamorphous semiconductor layer functioning as a buffer layer aresuccessively formed. First, in a manner similar to the formation of theinsulating layer, the inside of the reaction chamber is cleaned. Next, asilicon layer is deposited as a protective layer inside the processingcontainer. As the silicon layer, an amorphous silicon layer is formed tohave a thickness of about 0.2 μm to 0.4 μm inclusive. Here, the pressurein the processing container is 1 Pa to 200 Pa inclusive, preferably 1 Pato 100 Pa inclusive, and one or more kinds of rare gases such as helium,argon, xenon, and krypton is/are introduced as a plasma ignition gas.Note that hydrogen may be introduced together with the rare gas.

Then, the microwave generating apparatus is turned on, and the output ofthe microwave generating apparatus is 500 W to 6000 W inclusive,preferably 4000 W to 6000 W inclusive to generate plasma. Next, a sourcegas is introduced into the processing container through the gas pipe.Specifically, when a silicon hydride gas and a hydrogen gas areintroduced as source gases, a microcrystalline silicon layer is formedas a protective layer on the inner wall of the processing container andon the surfaces of the gas pipe, the dielectric plate, and the supportbase. Alternatively, a microcrystalline semiconductor layer can beformed from a dilution of a silicon hydride gas and a hydrogen gas withone or more kinds of rare gas elements selected from helium, argon,krypton, and neon. Here, the flow ratio of hydrogen to silicon hydrideis 5:1 to 200:1, preferably 50:1 to 150:1, more preferably about 100:1.In addition, the thickness of the protective layer at this time is 500nm to 2000 nm inclusive. Note that before the microwave generatingapparatus is turned on, a silicon hydride gas and a hydrogen gas may beintroduced into the processing container in addition to theaforementioned rare gas.

Alternatively, an amorphous semiconductor layer as the protective layercan be formed with a dilution of a silicon hydride gas with one or morekinds of rare gas elements selected from helium, argon, krypton, andneon.

Then, supply of the source gas is stopped, the pressure in theprocessing container is decreased, and the microwave generatingapparatus is turned off. After that, the substrate is introduced ontothe support base in the processing container.

Next, hydrogen plasma treatment is performed on the surface of the gateinsulating layer 104 which is formed over the substrate as describedabove. When hydrogen plasma treatment is performed before themicrocrystalline semiconductor layer is formed, lattice distortion atthe interface between the gate insulating layer 104 and thesemiconductor layer 106 can be reduced, and interface characteristicsbetween the gate insulating layer 104 and the semiconductor layer 106can be improved. Thus, electric characteristics of the thin filmtransistor which is to be formed can be improved.

In the above hydrogen plasma treatment, hydrogen plasma treatment isalso performed on the amorphous silicon layer which is formed as theprotective layer inside the processing container, so that the protectivelayer is etched and a slight amount of silicon is deposited on thesurface of the gate insulating layer 104. The slight amount of siliconserves as nuclei of crystal growth, and with the nuclei, themicrocrystalline semiconductor layer is deposited. Accordingly, latticedistortion at the interface between the gate insulating layer 104 andthe semiconductor layer 106 can be decreased, and interfacecharacteristics between the gate insulating layer 104 and thesemiconductor layer 106 can be improved. Therefore, electriccharacteristics of the thin film transistor which is to be formed can beimproved.

Next, in a manner similar to that of the protective layer, amicrocrystalline semiconductor material is deposited over the substrate.The thickness of the microcrystalline semiconductor layer is 2 nm to 50nm inclusive, preferably 10 nm to 30 nm inclusive. Note thatmicrocrystalline silicon is used as the microcrystalline semiconductor.

Note that crystals of the microcrystalline silicon layer grow from abottom portion of the layer toward an upper portion of the layer andneedle-like crystals are formed. This is because crystals grow so as toincrease a crystal surface. However, even when crystal growth occurs inthis manner, the formation rate of the microcrystalline silicon layer isabout greater than or equal to 1% and less than or equal to 10% of theformation rate of an amorphous silicon layer. Therefore, themicrocrystalline silicon layer is preferably formed thinly in order toincrease throughput.

After the microcrystalline silicon layer is deposited to a predeterminedthickness, supply of the source gases is stopped, the pressure in theprocessing container is decreased, the microwave generating apparatus isturned off, and the film formation process for the microcrystallinesilicon layer is finished.

Next, laser light may be applied to the microcrystalline silicon layerfrom the surface side thereof. As for the formation of amicrocrystalline silicon layer in this embodiment, after themicrocrystalline silicon layer is deposited over the gate insulatinglayer, laser light may be applied to the microcrystalline silicon layerfrom the surface side thereof.

The laser light can act on an interface between the microcrystallinesilicon layer and the gate insulating layer. Thus, crystallizationgrowth proceeds from the surface toward the interface between themicrocrystalline silicon layer and the gate insulating layer withcrystals formed on the surface side of the microcrystalline siliconlayer used as nuclei, and a columnar-like crystal is formed. Thecrystallization growth by the LP does not increase a crystal grain sizebut improves crystallinity in the thickness direction of the layer.

In the LP, when a laser beam is condensed in a long rectangular shape(is shaped into a linear laser beam), a microcrystalline silicon layerformed over a glass substrate having a size of 730 mm×920 mm can beprocessed by one scanning of a laser beam. In this case, the LP isperformed with a ratio of overlapping linear laser beams (an overlappingratio) of 0% to 98%, preferably 85% to 95%. By scanning in this manner,treatment time for one substrate is shortened, so that productivity canbe improved. Note that the shape of a laser beam is not limited to alinear shape, and similar treatment can be performed when the shape of alaser beam is a plane shape. Further, the LP is not limited by the sizeof the glass substrate, and the LP can be used for substrates withvarious sizes. When the LP is performed, crystallinity of a region inthe vicinity of the interface between the microcrystalline silicon layerand the gate insulating layer is improved, so that electriccharacteristics of the transistor having a bottom-gate structure can beimproved.

By such growth, unevenness (referred to as a “ridge”, and is a convexportion) of a surface generated in a conventional low-temperaturepolysilicon is not produced and thus excellent smoothness of siliconsurface which has been subjected to LP can be kept.

Therefore, an LPSAS layer which is obtained by directly applying laserlight to a deposited amorphous silicon layer has growth mechanism andfilm quality which are greatly different from those of a conventionalas-deposited microcrystalline silicon layer or a microcrystallinesilicon layer modified by conduction heating (see Non-Patent Document1). Note that this is just one embodiment of the present invention, andas described above, a microcrystalline semiconductor layer formedwithout being subjecting to the LP may be used.

After the LPSAS layer is formed, an amorphous semiconductor layer isformed at a temperature of 280° C. to 400° C. inclusive by a plasma CVDmethod. By depositing an amorphous semiconductor layer containinghydrogen over the LPSAS layer, hydrogen is diffused into the LPSAS layerso that a dangling bond can be terminated.

Next, the pressure in the processing container is reduced so as toadjust the flow rate of a source gas. Specifically, the flow rate of ahydrogen gas is much more decreased than that of the film formationcondition of the microcrystalline semiconductor layer. Typically, ahydrogen gas at a flow rate which is 1 to 200 times, preferably 1 to 100times, more preferably 1 to 50 times as high as that of silicon hydrideis introduced. Alternatively, a silicon hydride gas may be introducedinto the processing container without introducing a hydrogen gas intothe processing container. When the flow rate of hydrogen to siliconhydride is decreased in this manner, the formation rate of the amorphoussemiconductor layer which is formed as a buffer layer can be increased.Alternatively, a silicon hydride gas is diluted with one or more kindsof rare gas elements selected from helium, argon, krypton, and neon.Then, the microwave generating apparatus is turned on, and the output ofthe microwave generating apparatus is 500 W to 6000 W inclusive,preferably 4000 W to 6000 W inclusive in order to generate plasma. Thus,an amorphous semiconductor layer can be formed. Because the formationrate of an amorphous semiconductor layer is higher than that of amicrocrystalline semiconductor layer, the pressure in the processingcontainer can be set to be low. The thickness of the amorphoussemiconductor layer at this time may be 100 nm to 400 nm inclusive.

After the amorphous semiconductor layer is deposited to a predeterminedthickness, supply of the source gas is stopped, the pressure in theprocessing container is decreased, the microwave generating apparatus isturned off, and the film formation process of the amorphoussemiconductor layer is finished.

Note that the semiconductor layer 106 and the amorphous semiconductorlayer serving as the buffer layer 108 may be formed while plasma isignited. Specifically, the semiconductor layer 106 and the amorphoussemiconductor layer serving as the buffer layer 108 may be stacked withthe flow rate of hydrogen to silicon hydride gradually decreased. Withsuch a method, an impurity is not deposited at an interface between thesemiconductor layer 106 and the buffer layer 108 and thus an interfacewith little distortion can be formed. Thus, electric characteristics ofthe thin film transistor to be formed later can be improved.

Plasma which is generated by a microwave plasma CVD apparatus with afrequency of 1 GHz or more has high electron density and many radicalsare generated from a source gas and are supplied to the substrate. Thus,radical reaction on the substrate surface is promoted and the formationrate of the microcrystalline semiconductor can be increased. Further, amicrowave plasma CVD apparatus which includes a plurality of microwavegenerating apparatuses and a plurality of dielectric plates can generatelarge-area plasma stably. Therefore, even if a large-area substrate isused, a layer having high uniform film quality can be formed over thelarge-area substrate and mass productivity (yield) can be improved.

In addition, when the microcrystalline semiconductor layer and theamorphous semiconductor layer are successively formed in the sameprocessing container, an interface with little distortion can be formedand an atmospheric constituent which may be mixed into an interface canbe reduced, which is preferable.

Note that in the processes for forming the insulating layer and thesemiconductor layer, when a protective layer having a thickness ofgreater than or equal to 500 nm and less than or equal to 2000 nm isformed on the inner wall of the reaction chamber, the cleaning treatmentand the formation of a protective layer can be omitted.

Next, a resist mask 121 is formed over the impurity semiconductor layer(see FIG. 2A). The resist mask 121 is formed by a photolithographymethod or an inkjet method.

Next, the microcrystalline semiconductor layer, the amorphoussemiconductor layer, and the impurity semiconductor layer are etchedusing the resist mask 121. With this treatment, the semiconductor layer106, the buffer layer 108, and the source and drain regions 110 areseparated for each element (see FIG. 2B). Then, the resist mask 121 isremoved.

Note that the etching is preferably performed so that a side face of alayer where the microcrystalline semiconductor layer, the amorphoussemiconductor layer, and the impurity semiconductor layer are stackedhas a tapered shape. The taper angle is from 30° to 90° inclusive,preferably from 40° to 80° inclusive.

In addition, when the side face has a tapered shape, coverage with alayer to be formed thereover (e.g., a wiring layer) in a later step canbe improved. Therefore, disconnection or the like at a step portion canbe prevented.

Note that the term “taper angle” refers to an angle θ illustrated inFIG. 6. In FIG. 6, a layer 224 having a tapered side face is formed overa substrate 222. The taper angle of the layer 224 is θ.

Next, a conductive layer is formed over the impurity semiconductor layerand the gate insulating layer 104 (see FIG. 2C).

The conductive layer can be formed of a single-layer structure or astacked-layer structure of aluminum, copper, titanium, neodymium,scandium, molybdenum, chromium, tantalum, tungsten, or the like. Analuminum alloy to which an element to prevent a hillock is added (e.g.,an Al—Nd alloy which can be used for the gate electrode layer 102) maybe used. Alternatively, crystalline silicon to which an impurity elementimparting one conductivity type is added may be used. The conductivelayer may have a stacked-layer structure where a layer on the side whichis in contact with the crystalline silicon to which an impurity elementimparting one conductivity type is added is formed using titanium,tantalum, molybdenum, tungsten, or nitride of any of these elements andaluminum or an aluminum alloy is formed thereover. Furtheralternatively, the conductive layer may have a stacked-layer structurewhere an upper side and a lower side of aluminum or an aluminum alloy isprovided with titanium, tantalum, molybdenum, tungsten, or nitride ofany of these elements so as to be sandwiched. For example, theconductive layer preferably has a three-layer structure in which analuminum layer is sandwiched with molybdenum layers.

The conductive layer is formed by a sputtering method, a vacuumevaporation method, or the like. Alternatively, the conductive layer maybe formed by discharge of a conductive nanopaste of silver, gold,copper, or the like by using a screen printing method, an inkjet method,or the like and by baking the conductive nanopaste.

Then, a resist mask 122 is formed over the conductive layer (see FIG.3A). The resist mask 122 is formed by a photolithography method or aninkjet method, in a manner similar to that of the resist mask 121. Here,O₂ plasma ashing may be conducted in order to control the size of theresist mask.

Then, the conductive layer is etched using the resist mask 122 to bepatterned (see FIG. 3B). The patterned conductive layers serve as sourceand drain electrodes. The etching is preferably wet etching. By wetetching, the side faces of the conductive layers are selectively etched.As a result, the side faces of the conductive layers recede inwardly, sothat source and drain electrode layers 112 are formed. In this case, theside faces of the source and drain electrode layers 112 are not alignedwith the side faces of the impurity semiconductor layers, and the sidefaces of the impurity semiconductor layers are located outside the sidefaces of the source and drain electrode layers 112. The source and drainelectrode layers 112 serving as the source and drain electrodes alsoconstitute a part of a signal line.

Next, the impurity semiconductor layer and the amorphous semiconductorlayer are etched with the resist mask 122 formed thereover, so that aback channel portion is formed (see FIG. 3C). Note that the amorphoussemiconductor layer is etched so as to leave a part thereof, and thesurface of the semiconductor layer 106 is covered with the amorphoussemiconductor layer. By etching the amorphous semiconductor layer, thebuffer layer 108 is formed. Here, as the etching, dry etching may beperformed using a Cl₂ gas.

The buffer layer 108 has a depression portion which is formed when partof the buffer layer 108 is etched in the formation of the source anddrain regions. The buffer layer 108 is preferably formed to a thicknesssuch that part of the buffer layer 108 overlapping with the depressionportion remains after etching. Preferably, the thickness of a remainingportion after the etching (the portion overlapping with the depressionportion) is approximately half the thickness before the etching. Notethat the thickness before the etching is 100 nm to 500 nm inclusive,preferably 150 nm to 400 nm inclusive, more preferably 200 nm to 300 nminclusive. Note that because the part of the buffer layer 108overlapping with the source and drain regions 110 is not etched in theformation process of the source and drain regions 110, the part of thebuffer layer 108 overlapping with the source and drain regions 110 has athickness of 100 nm to 500 nm inclusive, preferably 150 nm to 400 nminclusive, more preferably 200 nm to 300 nm inclusive. When an amorphoussemiconductor layer serving as the buffer layer 108 is sufficientlythick as described above, the semiconductor layer 106 can be formedstably. In this manner, the buffer layer 108 also serves as a protectivelayer for the semiconductor layer 106.

Next, the resist mask 122 is removed (see FIG. 4A).

As described above, the buffer layer 108 is provided in the thin filmtransistor formed using the microcrystalline semiconductor layer, sothat substances included in the remover solution, residues of the resistmask, and the like can be prevented from mixing into the semiconductorlayer 106. However, residual product caused by the etching process,residues of the resist mask, substances that can be contaminationsources in an apparatus which has been used for removal of the resistmask 122, substances included in the remover solution which has beenused for removal of the resist mask, and the like are attached ordeposited over the buffer layer 108 between the source region and thedrain region (the back channel portion). Thus, by electric conductionthrough the product, residues, and substances, off current is increasedin many elements, which leads to variation in electric characteristicsbetween the elements over the same substrate in many cases. This trendis apparent especially when a remover solution including sulfur is usedin removing the resist mask. The remover solution including sulfur isoften used in the process for removing the resist mask.

In a process for removing a resist mask, a remover solution containingphenol, chlorobenzene, or the like as a main component is often used.However, it is difficult to remove the resist mask with phenol,chlorobenzene, or the like alone in many cases, and the resist mask thatcannot be removed causes reduction in yield. In order to improve thecapability to remove the resist mask, alkylbenzene sulfonate ispreferably contained in the remover solution.

The present inventors have found that when a thin film transistor ismanufactured using the alkylbenzene sulfonate based remover solution(containing alkylbenzene sulfonate as a main component) after formationof the back channel portion, the off current of the thin film transistorcan be especially increased. It is considered that this is because thesulfo group contained in the alkylbenzene sulfonate based removersolution is easily hydrated (hydrophilicity) and theelectron-withdrawing property is strong; thus, the presence of thesubstance including the sulfo group in a back channel portion increasesleakage current.

Therefore, in order to solve the above problem, dry etching (slightetching) is further conducted. By slight etching, substances included inthe remover solution, residues of the resist mask, and the like whichexist in the back channel portion can be removed, and insulation betweenthe source region and the drain region can be secured. The etchingcondition is set such that the exposed amorphous semiconductor layer isnot damaged and the etching rate to the amorphous semiconductor layer islow. In other words, a condition which gives almost no damages to thesurface of the exposed amorphous semiconductor layer (a surface layer ofthe back channel portion) and does not reduce the thickness of theamorphous semiconductor layer may be applied. At this time, a gas whichis capable of effectively removing substances included in the removersolution and residues of the resist mask may be used as the etching gas.An inductively-coupled plasma etching method is preferably employed forthe etching. As an example of the etching condition, when a CF₄ gas isused, the gas flow rate is 100 sccm, the pressure of a chamber is 0.67Pa, the temperature of a lower electrode is −10° C., the temperature ofthe side wall of the chamber is about 80° C., and an RF power (13.56MHz) of 1000 W is applied to a coiled electrode to generate plasma whileno power is applied to a substrate side (i.e., 0 W, non-biased). On thecondition, etching may be conducted for thirty seconds. Alternatively,when an N₂ gas is used, the gas flow rate is 100 sccm, the pressure of achamber is 0.67 Pa, the temperature of a lower electrode is −10° C., thetemperature of the side wall of the chamber is about 80° C., and an RFpower (13.56 MHz) of 3000 W is applied to a coiled electrode to generateplasma while a power of 50 W is applied to a substrate side. On thecondition, etching may be conducted for sixty seconds. Note that here,when a CF₄ gas is used, the amount of applied power and the period oftime for conducting etching are set to be smaller than those when an N₂gas is used. This is because silicon is hardly etched when an N₂ gas isused while the etching rate to silicon is high when a CF₄ gas is used.By this etching, the hydrophilic group including sulfur or the likecontained in the remover solution is removed, for example.

Here, as described above, as an etching gas, a gas which is capable ofeffectively removing substances included in the remover solution,residues of the resist mask, and the like may be used. In order toselect the favorable etching gas, the present inventors select a Cl₂gas, a CF₄ gas, an N₂ gas, an He gas, an H₂ gas, or a mixed gas of CF₄and O₂ (the flow ratio of CF₄ to O₂ is set to 60:40), measure changes ina drain current (I_(d)) with respect to a gate voltage (V_(g)), andcreate an I_(d)−V_(g) curve. FIGS. 40A and 40B, FIGS. 41A and 41B, andFIGS. 42A and 42B show these results. For evaluation of off current, acomparison is made at a constant gate voltage (V_(g)=−10V).

According to FIGS. 40A and 40B, FIGS. 41A and 41B, and FIGS. 42A and42B, in the case where etching is performed using a Cl₂ gas (see FIG.40A), an He gas (see FIG. 41B), and an H₂ gas (see FIG. 42A), 1.0×10⁻¹¹(A)<I_(d)<1.0×10⁻¹⁰ (A) is almost satisfied when V_(g)=−10V issatisfied, for example. In order to obtain sufficient switchingcharacteristics, it is preferable that I_(d)<1.0×10⁻¹¹ (A) be satisfied.Thus, it is difficult to obtain sufficient switching characteristicswhen a Cl₂ gas, an He gas, an H₂ gas are used for etching. On the otherhand, when etching is performed using a CF₄ gas or an N₂ gas,I_(d)<1.0×10⁻¹¹ (A) is almost satisfied when V_(g)=−10V is satisfied(see FIG. 40B and FIG. 41A). In the case where etching is performedusing a mixed gas of CF₄ and O₂ (the flow ratio of CF₄ to O₂ is set to60:40), 1.0×10⁻¹⁰ (A)<I_(d)<1.0×10⁻⁸ (A) is almost satisfied whenV_(g)=−10V is satisfied and the value of the drain current is increasedas compared to a case where etching is performed using a Cl₂ gas, an Hegas, or an H₂ gas (see FIG. 42B). Therefore, in order to obtainsufficient switching characteristics, it is preferable that a CF₄ gas oran N₂ gas be used.

Here, when the case where a CF₄ gas is used as an etching gas iscompared with the case where an N₂ gas is used as an etching gas, theminimum value of the drain current in the case of using a CF₄ gas issmaller than that in the case of using an N₂ gas; however, when V_(g)<0is satisfied, I_(d) in the case of using a CF₄ gas tends to be largerthan that in the case of using an N₂ gas. Such a case is describedlater.

There is no particular limitation on an etching method, and acapacitively coupled plasma (CCP) method, an electron cyclotronresonance (ECR) method, or a reactive ion etching (RIE) method, or thelike can be used, as well as an inductively coupled plasma (ICP) method.

Note that the slight etching is preferably conducted by a discontinuousdischarge (pulsed discharge), not by continuous discharge. Morepreferably, a repetition pulse discharge is conducted. When the slightetching is conducted using pulsed discharge, charge-up damage generatedin the back channel portion which is subjected to etching can bereduced. By reducing the charge-up damage in the back channel portion,leakage current can be reduced between the source electrode and thedrain electrode. Accordingly, by pulsed discharge, off current can befurther reduced and thus switching characteristics can be improved.

The etching is performed as described above so that residues of theresist mask, substances included in the remover solution used in theremoval process, and the like which exist over a depression portion ofthe buffer layer 108 between source and drain regions (the back channelportion) can be removed.

FIG. 43 shows a result of analysis in which etching is performed in sucha manner in order to remove substances included in the remover solution,residues of the resist mask, and the like which exist in a back channelportion and then the etched portion is subjected to time of flightsecondary ion mass spectrometry (ToF-SIMS). As for samples, a samplewhich is neither subjected to slight etching nor subjected to a processfor removing a resist mask (Sample 1: after channel etching), a samplewhich is subjected to a process for removing a resist mask (Sample 2:after removal of a resist mask), a sample which is subjected to slightetching using a Cl₂ gas (Sample 3: after slight etching using a Cl₂gas), a sample which is subjected to slight etching using a CF₄ gas(Sample 4: after slight etching using a CF₄ gas), and a sample which issubjected to slight etching using an N₂ gas (Sample 5: after slightetching using an N₂ gas) are used.

In Sample 3, the count number of metal elements, C₈H₁₂N, C₂H₈NO, andC₆H₅O is smaller than that of other samples, and the count number ofC₁₈H₂₉SO₃ is large. Then, when comparison is made focusing on only thecount number of C₁₈H₂₉SO₃, the count number is large in Sample 2 andSample 3 (see FIG. 43). In Sample 4 and Sample 5, the count number ofC₁₈H₂₉SO₃ is less than or equal to the detection limit (see FIG. 44).

Further, also in Sample 1, the count number of C₁₈H₂₉SO₃ is less than orequal to the detection limit. Thus, it can be considered that C₁₈H₂₉SO₃is not caused by etching for forming a back channel portion but iscaused in the process for removing a resist mask. It can be consideredthat this is because alkylbenzene sulfonate is contained in the removersolution used in the process for removing a resist mask.

When Sample 3, Sample 4, and Sample 5 are compared, C₁₈H₂₉SO₃ isdetected only in Sample 3. It can be considered that the count number ofother substances is small while the count number of C₁₈H₂₉SO₃ is largein Sample 3, which causes the increase in leakage current.

Next, FIGS. 45A and 45B and FIGS. 46A and 46B show an I_(d)−V_(g) curveof Samples 2 to 5. Note that conditions under which slight etching isperformed on Samples 3 to 5 are described below. Further, an I_(d)−V_(g)curve is created based on data obtained when V_(d)=1V, 10V, or 14V issatisfied.

As for Sample 3, when a Cl₂ gas is used, the gas flow rate is 100 sccm,the pressure of a chamber is 0.67 Pa, the temperature of a lowerelectrode is −10° C., the temperature of the side wall of the chamber isabout 80° C., and an RF power (13.56 MHz) of 2000 W is applied to acoiled electrode to generate plasma while no power is applied to asubstrate side (i.e., 0 W, non-biased). On the condition, etching isconducted for thirty seconds.

As for Sample 4, when a CF₄ gas is used, the gas flow rate is 100 sccm,the pressure of a chamber is 0.67 Pa, the temperature of a lowerelectrode is −10° C., the temperature of the side wall of the chamber isabout 80° C., and an RF power (13.56 MHz) of 1000 W is applied to acoiled electrode to generate plasma while no power is applied to asubstrate side (i.e., 0 W, non-biased). On the condition, etching isconducted for thirty seconds.

As for Sample 5, when an N₂ gas is used, the gas flow rate is 100 sccm,the pressure of a chamber is 0.67 Pa, the temperature of a lowerelectrode is −10° C., the temperature of the side wall of the chamber isabout 80° C., and an RF power (13.56 MHz) of 3000 W is applied to acoiled electrode to generate plasma while a power of 50 W is applied toa substrate side. On the condition, etching is conducted for sixtyseconds.

In Sample 2 which is not subjected to slight etching, an I_(d)−V_(g)curve is different between a case where the drain voltage (a potentialdifference between a drain potential and a source potential serving as areference potential) is 1 V and a case where the drain voltage is 10 V.In this case, even if the gate voltage is equal, the drain currentchanges depending on the drain voltage; thus, Sample 2 is not suitablefor a transistor (see FIG. 45A).

In Sample 3 which is subjected to slight etching using a Cl₂ gas, anI_(d)−V_(g) curve when the drain voltage is 1 V has almost the sameshape as an I_(d)−V_(g) curve when the drain voltage is 10 V. However,I_(d) is high when Vg<0 is satisfied and switching characteristics arenot favorable. With the use of such a thin film transistor as a pixeltransistor of a liquid crystal display device, for example, a liquidcrystal display device with a low contrast ratio and low display qualityis obtained (see FIG. 45B).

In Sample 4 which is subjected to slight etching using a CF₄ gas andSample 5 which is subjected to slight etching using an N₂ gas, anI_(d)−V_(g) curve when the drain voltage is 1 V has almost the sameshape as an I_(d)−V_(g) curve when the drain voltage is 10 V. Further,I_(d)≦1.0×10⁻¹² A is almost satisfied when V_(g)=−10V is satisfied. Itcan be said that off current is sufficiently low when Vg<0 is satisfied.Furthermore, the minimum value of I_(d) in Sample 4 is smaller than thatin Sample 5. When V_(g) is reduced, the increase in I_(d) in Sample 5 islarger than that in Sample 4 (see FIGS. 46A and 46B). Thus, it can besaid that a gas used for slight etching may be selected from an N₂ gasand a CF₄ gas in accordance with characteristics desired for a thin filmtransistor.

The above is summarized as follows. In the above process, a resist maskis removed using the remover solution containing alkylbenzene sulfonateafter a back channel portion is formed. Thus, alkylbenzene sulfonate isleft in the back channel portion. Alkylbenzene sulfonate includes thesulfo group. The sulfo group has a hydrophilic property and has thestrong electron-withdrawing property. Therefore, it can be consideredthat the presence of the sulfo group in the back channel portion causesleakage current. Further, it can be considered that an N₂ gas or a CF₄gas is more effective at removing alkylbenzene sulfonate than a Cl₂ gas.Thus, it can be considered that an N₂ gas or a CF₄ gas is used forslight etching so that leakage current can be further reduced than a Cl₂gas is used.

Through this process, the impurity semiconductor layer not overlappingthe source and drain electrode layers 112 is slightly etched. In theabove etching condition, the impurity semiconductor layer is etched by,for example about greater than or equal to 0 nm and less than or equalto 5 nm in many cases. Accordingly, in the thin film transistor of oneembodiment of the present invention, a side face (an inner side face) ofan upper portion (the first portion) of the source and drain regions 110exists in the same plane as or substantially the same plane as a sideface of the source and drain electrode layers 112, and a side face (aninner side face) of a lower portion (the second portion) of the sourceand drain regions 110 exists in the same plane as or substantially thesame plane as a side face of the buffer layer (see FIG. 4B). By thisetching process, the impurity semiconductor layer may be nearlystepwise-shaped in some cases.

In addition, as described above, because the side faces of the sourceand drain electrode layers 112 are not aligned with the side faces ofthe source and drain regions 110, the distance between the sourceelectrode and the drain electrode is sufficiently large. Thus, leakagecurrent can be reduced and short-circuit can be prevented. Further,because the side faces of the source and drain electrode layers 112 arenot aligned with the side faces of the source and drain regions 110,electric field concentration hardly occurs in the side faces of thesource and drain electrode layers 112 and the side faces of the sourceand drain regions 110. Further, by the buffer layer 108 which is ahigh-resistant region, the distance between the gate electrode layer 102and the source and drain electrode layers 112 is sufficiently large.Therefore, generation of parasitic capacitance can be suppressed andleakage current can be reduced, so that the thin film transistor whichhas a low off current and high withstand voltage can be formed.

Through the above steps, a channel-etched thin film transistor of oneembodiment of the present invention can be formed.

Next, the insulating layer 114 is formed so as to cover the source anddrain electrode layers 112, the source and drain regions 110, thesemiconductor layer 106, and the gate insulating layer 104 (see FIG.4C). The insulating layer 114 can be formed in a manner similar to thatof the gate insulating layer 104. Note that the insulating layer 114 ispreferably a dense silicon nitride layer such that entry of acontaminant impurity such as an organic substance, a metal substance, ormoisture floating in the atmosphere can be prevented. In addition, thecarbon, nitrogen, and oxygen concentrations in the buffer layer 108 ispreferably 1×10¹⁹ atoms/cm³ or less, more preferably 5×10¹⁸ atoms/cm³ orless.

Note that the thin film transistor illustrated in FIG. 1 serves as apixel transistor, and thus one of the source electrode and the drainelectrode is connected to the pixel electrode. In the thin filmtransistor illustrated in FIG. 1, one of the source electrode and thedrain electrode is connected to the pixel electrode layer 118 throughthe opening portion 116 provided in the insulating layer 114.

The pixel electrode layer 118 can be formed using a light-transmittingconductive material such as indium oxide containing tungsten oxide,indium zinc oxide containing tungsten oxide, indium oxide containingtitanium oxide, indium tin oxide containing titanium oxide, indium tinoxide (hereinafter referred to as an “ITO”), indium zinc oxide, orindium tin oxide to which silicon oxide is added.

A conductive composition including a conductive high molecule (alsoreferred to as a conductive polymer) can be used for the pixel electrodelayer 118. The pixel electrode layer 118 formed using such a conductivecomposition preferably has a sheet resistance of 10000 Ω/cm² or less anda light transmittance of 70% or higher at a wavelength of 550 nm. Notethat resistance of the conductive high molecule included in theconductive composition is preferably 0.1 Ω·cm or lower.

As such a conductive high molecule, so-called π electron conjugatedconductive high-molecule can be used. For example, polyaniline or aderivative thereof, polypyrrole or a derivative thereof, polythiopheneor a derivative thereof, a copolymer of two or more kinds of thosematerials, and the like can be given.

The pixel electrode layer 118 may be formed in a manner similar to thatof the source and drain electrode layers 112 or the like, in otherwords, a conductive layer may be entirely formed and then etched using aresist mask or the like to be patterned.

Note that in the above description, the gate electrode and the scan lineare formed in the same process and the source and drain electrodes andthe signal line are formed in the same process. However, the presentinvention is not limited to the description. The electrodes and wiringsconnected to the electrodes may be formed in a removal process.

As described above in this embodiment, a thin film transistor with lessleakage current between the source and drain electrodes and highwithstand-voltage can be manufactured. The thin film transistormanufactured as described above can have excellent electriccharacteristics. Even when such thin film transistors are formed over alarge-sized substrate, variation between elements formed over the samesubstrate can be reduced.

In addition, as described above, the thin film transistor in thisembodiment can have high switching characteristics. Thus, with the useof the thin film transistor as a pixel transistor, a display devicehaving high contrast ratio can be manufactured.

Embodiment 2

In this embodiment, a method for manufacturing a thin film transistor ofone embodiment of the present invention, which is different from that ofEmbodiment 1, is described with reference to drawings. Specifically, amode is described in which no resist mask is used in forming a backchannel, and the back channel is formed using source and drain electrodelayers as a mask.

The method for manufacturing a thin film transistor of one embodiment ofthe present invention is described with reference to FIGS. 7A to 7C andFIGS. 8A and 8B.

First, steps up to and including the etching of a conductive layerserving as source and drain electrodes are conducted (see FIG. 7A). FIG.7A is similar to FIG. 3A. By this step, the source and drain electrodesare formed. In etching the conductive layer, a resist mask 126 is used.

After that, the resist mask 126 is removed (see FIG. 7B). Then, animpurity semiconductor layer and a buffer layer are partially etchedusing the source and drain electrodes as a mask in order to separate asource region and a drain region from each other. By this step, thesource and drain regions are formed so that a back channel portion isformed (see FIG. 7C).

In a manner similar to that of Embodiment 1, also in the abovemanufacturing method, residual products caused by the etching process,residues of the resist mask, substances which can be contaminationsources in an apparatus which has been used for removal of the resistmask, substances included in the remover solution which has been usedfor removal of the resist mask, and the like are attached or depositedover the depression portion of the buffer layer between the sourceregion and the drain region (the back channel portion), and thus byconduction through the residual products, residues, and substances, offcurrent is increased in many elements, which leads to variation inelectric characteristics between the elements over the same substrate inmany cases. This trend is apparent especially when a remover solutionincluding sulfur is used for removal of the resist mask. The removersolution including sulfur is often used in the process for removing theresist mask. As an example of such a remover solution, a removersolution including alkylbenzene sulfonate can be given.

Therefore, in order to solve the above problem, dry etching (slightetching) is further conducted. By slight etching, substances included inthe remover solution, residues of the resist mask, and the like whichexist in the back channel portion can be removed, and insulation betweenthe source region and the drain region can be secured. The etchingcondition is set such that the exposed amorphous semiconductor layer isnot damaged and the etching rate to the amorphous semiconductor layer islow. In other words, a condition which gives almost no damages to thesurface of the exposed amorphous semiconductor layer (a surface layer ofthe back channel portion) and does not reduce the thickness of theamorphous semiconductor layer may be applied. At this time, a gas whichis capable of effectively removing substances included in the removersolution and residues of the resist mask may be used as the etching gas.For example, as described in Embodiment 1, an N₂ gas or a CF₄ gas may beused. An inductively-coupled plasma etching method is preferablyemployed for the etching. As an example of the etching condition, when aCF₄ gas is used, the gas flow rate is 100 sccm, the pressure of achamber is 0.67 Pa, the temperature of a lower electrode is −10° C., thetemperature of the side wall of the chamber is about 80° C., and an RFpower (13.56 MHz) of 1000 W is applied to a coiled electrode to generateplasma while no power is applied to a substrate side (i.e., 0 W,non-biased). On the condition, etching may be conducted for thirtyseconds. Alternatively, when an N₂ gas is used, the gas flow rate is 100sccm, the pressure of a chamber is 0.67 Pa, the temperature of a lowerelectrode is −10° C., the temperature of the side wall of the chamber isabout 80° C., and an RF power (13.56 MHz) of 3000 W is applied to acoiled electrode to generate plasma while a power of 50 W is applied toa substrate side. On the condition, etching may be conducted for sixtyseconds. Note that here, when a CF₄ gas is used, the amount of appliedpower and the period of time for conducting etching are set to besmaller than those when an N₂ gas is used. This is because silicon ishardly etched when an N₂ gas is used while the etching rate to siliconis high when a CF₄ gas is used. By this etching, the hydrophilic groupincluding sulfur or the like contained in the remover solution isremoved, for example.

There is no particular limitation on an etching method, and acapacitively coupled plasma (CCP) method, an electron cyclotronresonance (ECR) method, or a reactive ion etching (RIE) method, or thelike can be used, as well as an inductively coupled plasma (ICP) method.

Note that the slight etching is preferably conducted by a discontinuousdischarge, more preferably pulsed discharge, not by a continuousdischarge. When the slight etching is conducted using pulsed discharge,charge-up damage generated in the back channel portion which issubjected to etching can be reduced. By reducing the charge-up damage inthe back channel portion, leakage current can be reduced between thesource electrode and the drain electrode. Accordingly, by pulseddischarge, off current can be further reduced and thus switchingcharacteristics can be improved.

The etching is performed as described above, so that residues of theresist mask, substances included in the remover solution used in theremoval process, and the like which exist over a depression portion ofthe buffer layer 108 between source and drain regions (the back channelportion) can be removed. However, as described in Embodiment 1, theimpurity semiconductor layer does not exist in a region not overlappingthe source and drain electrode layers, and thus the impuritysemiconductor layer is not etched in the etching step (see FIG. 8A).Through the above steps, the thin film transistor can be manufactured.

Next, an insulating layer is formed so as to cover the manufactured thinfilm transistor (see FIG. 8B). This insulating layer may be formed in amanner similar to that of the insulating layer 114 in Embodiment 1.

When this thin film transistor is used as a pixel transistor, one of thesource and drain electrodes may be connected to a pixel electrode.

Next, a manufacturing method, which is different from the above method,is described.

First, similar to FIG. 3A, a conductive layer is etched to a desiredpattern with a resist mask formed thereover. In this case, dry etchingis conducted, unlike in Embodiment 1. The conductive layer is dry-etchedso as to be patterned conductive layers and side faces of the conductivelayers do not recede inwardly from side faces of the resist mask, asillustrated in FIG. 9A. A resist mask 131 is used in this etching.

Then, the conductive layers are wet-etched. By this wet etching, theside faces of the conductive layers recede, so that source and drainelectrodes are formed (see FIG. 9B).

Then, the impurity semiconductor layer and the buffer layer arepartially etched in order to separate the source region and the drainregion from each other. By this step, the source and drain regions areformed, so that the back channel portion is formed (see FIG. 9C).

After that, the resist mask 131 is removed (see FIG. 10A).

In a manner similar to those of other manufacturing methods, also in theabove manufacturing method, residual products caused by the etchingprocess, residues of the resist mask, substances which can becontamination sources in an apparatus which has been used for removal ofthe resist mask, substances included in the remover solution which hasbeen used for removal of the resist mask, and the like are attached ordeposited over the depression portion of the buffer layer between thesource region and the drain region (the back channel portion), and thusby conduction through the residual products, residues, and substances,off current is increased in many elements, which leads to variation inelectric characteristics between the elements over the same substrate inmany cases. This trend is apparent especially when a remover solutionincluding sulfur is used for removal of the resist mask. The removersolution including sulfur is often used in the process for removing theresist mask. As an example of such a remover solution, a removersolution including alkylbenzene sulfonate can be given.

Therefore, in order to solve the above problem, dry etching (slightetching) is further conducted. By slight etching, substances included inthe remover solution, residues of the resist mask, and the like whichexist in the back channel portion can be removed, and insulation betweenthe source region and the drain region can be secured. The etchingcondition is set such that the exposed amorphous semiconductor layer isnot damaged and the etching rate to the amorphous semiconductor layer islow. In other words, a condition which gives almost no damages to thesurface of the exposed amorphous semiconductor layer (a surface layer ofthe back channel portion) and does not reduce the thickness of theamorphous semiconductor layer may be applied. At this time, a gas whichis capable of effectively removing substances included in the removersolution and residues of the resist mask may be used as the etching gas.For example, as described in Embodiment 1, an N₂ gas or a CF₄ gas may beused. An inductively-coupled plasma etching method is preferablyemployed for the etching. As an example of the etching condition, when aCF₄ gas is used, the gas flow rate is 100 sccm, the pressure of achamber is 0.67 Pa, the temperature of a lower electrode is −10° C., thetemperature of the side wall of the chamber is about 80° C., and an RFpower (13.56 MHz) of 1000 W is applied to a coiled electrode to generateplasma while no power is applied to a substrate side (i.e., 0 W,non-biased). On the condition, etching may be conducted for thirtyseconds. Alternatively, when an N₂ gas is used, the gas flow rate is 100sccm, the pressure of a chamber is 0.67 Pa, the temperature of a lowerelectrode is −10° C., the temperature of the side wall of the chamber isabout 80° C., and an RF power (13.56 MHz) of 3000 W is applied to acoiled electrode to generate plasma while a power of 50 W is applied toa substrate side. On the condition, etching may be conducted for sixtyseconds. Note that here, when a CF₄ gas is used, the amount of appliedpower and the period of time for conducting etching are set to besmaller than those when an N₂ gas is used. This is because silicon ishardly etched when an N₂ gas is used while the etching rate to siliconis high when a CF₄ gas is used. By this etching, the hydrophilic groupincluding sulfur or the like contained in the remover solution isremoved, for example.

There is no particular limitation on an etching method, and acapacitively coupled plasma (CCP) method, an electron cyclotronresonance (ECR) method, or a reactive ion etching (RIE) method, or thelike can be used, as well as an inductively coupled plasma (ICP) method.

Note that the slight etching is preferably conducted by a discontinuousdischarge, more preferably pulsed discharge, not by a continuousdischarge. When the slight etching is conducted using pulsed discharge,charge-up damage generated in the back channel portion which issubjected to etching can be reduced. By reducing the charge-up damage inthe back channel portion, leakage current can be reduced between thesource electrode and the drain electrode. Accordingly, by pulseddischarge, off current can be further reduced and thus switchingcharacteristics can be improved.

The aforementioned etching can remove residues of the resist mask,substances included in the remover solution used in the removal process,and the like which exist over the depression portion of the buffer layerbetween the source region and the drain region (the back channelportion). In addition, by this etching process, the impuritysemiconductor layer not overlapping the source and drain electrodelayers 112 is slightly etched. In the above etching condition, theimpurity semiconductor layer is etched by, for example about greaterthan or equal to 0 nm and less than or equal to 5 nm. Accordingly, inthe thin film transistor manufactured by the aforementioned method, aside face (an inner side face) of an upper portion (first portion) ofthe source and drain regions exists in the same plane as orsubstantially the same plane as a side face of the source and drainelectrode layers, and a side face (an inner side face) of a lowerportion (second portion) of the source and drain regions exists in thesame plane as or substantially the same plane as a side face of thebuffer layer (see FIG. 10B). By this etching process, the impuritysemiconductor layer may be nearly stepwise-shaped in some cases. In thismanner, the thin film transistor can be manufactured.

Next, an insulating layer is formed so as to cover the thin filmtransistor (see FIG. 10C). This insulating layer may be formed in amanner similar to that of the insulating layer 114 in Embodiment 1.

When the thin film transistor is used as a pixel transistor, one of thesource and drain electrodes may be connected to a pixel electrode.

As described above, the present invention is not limited to the methoddescribed in Embodiment 1, and can be employed for a wide variety ofmethods for manufacturing thin film transistors.

Embodiment 3

In this embodiment, a method for manufacturing a thin film transistorwhich is one embodiment of the present invention, which is differentfrom those of Embodiments 1 and 2, is described with reference todrawings. Specifically, a method is described in which a multi-tone maskis used.

First, a stacked body in which the steps up to and including theformation of a conductive layer are completed in a manner similar to themanufacturing method described in Embodiment 1 or the like is obtained.Then, a resist mask 136 having a depression portion at a desiredposition is formed over the stacked body (see FIG. 11A). The resist maskcan be a multi-tone mask. As examples of the multi-tone mask, a greytone mask or a halftone mask can be given, and a known multi-tone maskmay be used.

Then, a microcrystalline semiconductor layer, an amorphous semiconductorlayer, and an impurity semiconductor layer are etched using the resistmask 136. By this etching, the semiconductor layer, the buffer layer,and the impurity semiconductor layer can be separated corresponding toeach element. The etching may be dry etching or wet etching. After that,ashing using oxygen plasma or the like is conducted so that thedepression portion of the resist mask can reach a conductive layerdirectly under the resist mask, and whereby a resist mask 137 is formed(see FIG. 11B).

Next, the conductive layer is etched using the resist mask 137 so as tobe patterned (see FIG. 11C). The patterned conductive layers serve assource and drain electrodes. In this case, the etching is wet etching.In this manner, the same state as that in FIG. 3B can be obtained.

Then, the impurity semiconductor layer and the buffer layer arepartially etched so as to separate a source region and a drain regionfrom each other. By this step, the source and drain regions are formedso that a back channel portion is formed (see FIG. 12A).

After that, the resist mask 137 is removed (see FIG. 12B).

In a manner similar to those of other manufacturing methods, also in theabove manufacturing method, residual products caused by the etchingprocess, residues of the resist mask, substances which can becontamination sources in an apparatus which has been used for removal ofthe resist mask, substances included in the remover solution which hasbeen used for removal of the resist mask, and the like are attached ordeposited over the depression portion of the buffer layer between thesource region and the drain region (the back channel portion), and thusby conduction through the residual products, residues, and substances,off current is increased in many elements, which leads to variation inelectric characteristics between the elements over the same substrate inmany cases. This trend is apparent especially when a remover solutionincluding sulfur is used for removal of the resist mask. The removersolution including sulfur is often used in the process for removing theresist mask. As an example of such a remover solution, a removersolution including alkylbenzene sulfonate can be given.

Therefore, in order to solve the above problem, dry etching (slightetching) is further conducted. By slight etching, substances included inthe remover solution, residues of the resist mask, and the like whichexist in the back channel portion can be removed, and insulation betweenthe source region and the drain region can be secured. The etchingcondition is set such that the exposed amorphous semiconductor layer isnot damaged and the etching rate to the amorphous semiconductor layer islow. In other words, a condition which gives almost no damages to thesurface of the exposed amorphous semiconductor layer (a surface layer ofthe back channel portion) and does not reduce the thickness of theamorphous semiconductor layer may be applied. At this time, a gas whichis capable of effectively removing substances included in the removersolution and residues of the resist mask may be used as the etching gas.For example, as described in Embodiment 1, an N₂ gas or a CF₄ gas may beused. An inductively-coupled plasma etching method is preferablyemployed for the etching. As an example of the etching condition, when aCF₄ gas is used, the gas flow rate is 100 sccm, the pressure of achamber is 0.67 Pa, the temperature of a lower electrode is −10° C., thetemperature of the side wall of the chamber is about 80° C., and an RFpower (13.56 MHz) of 1000 W is applied to a coiled electrode to generateplasma while no power is applied to a substrate side (i.e., 0 W,non-biased). On the condition, etching may be conducted for thirtyseconds. Alternatively, when an N₂ gas is used, the gas flow rate is 100sccm, the pressure of a chamber is 0.67 Pa, the temperature of a lowerelectrode is −10° C., the temperature of the side wall of the chamber isabout 80° C., and an RF power (13.56 MHz) of 3000 W is applied to acoiled electrode to generate plasma while a power of 50 W is applied toa substrate side. On the condition, etching may be conducted for sixtyseconds. Note that here, when a CF₄ gas is used, the amount of appliedpower and the period of time for conducting etching are set to besmaller than those when an N₂ gas is used. This is because silicon ishardly etched when an N₂ gas is used while the etching rate to siliconis high when a CF₄ gas is used. By this etching, the hydrophilic groupincluding sulfur or the like contained in the remover solution isremoved, for example.

There is no particular limitation on an etching method, and acapacitively coupled plasma (CCP) method, an electron cyclotronresonance (ECR) method, or a reactive ion etching (RIE) method, or thelike can be used, as well as an inductively coupled plasma (ICP) method.

Note that the slight etching is preferably conducted by a discontinuousdischarge, more preferably pulsed discharge, not by a continuousdischarge. When the slight etching is conducted using pulsed discharge,charge-up damage generated in the back channel portion which issubjected to etching can be reduced. By reducing the charge-up damage inthe back channel portion, leakage current can be reduced between thesource electrode and the drain electrode. Accordingly, by pulseddischarge, off current can be further reduced and thus switchingcharacteristics can be improved.

The aforementioned etching can remove residues of the resist mask,substances included in the remover solution used in the removal process,and the like which exist over the depression portion of the buffer layerbetween the source region and the drain region (the back channelportion). In addition, by this etching process, the impuritysemiconductor layer not overlapping the source and drain electrodelayers 112 is slightly etched. In the above etching condition, theimpurity semiconductor layer is etched by, for example about greaterthan or equal to 0 nm and less than or equal to 5 nm. Accordingly, inthe thin film transistor manufactured by the aforementioned method, aside face (an inner side face) of an upper portion (first portion) ofthe source and drain regions exists in the same plane as orsubstantially the same plane as a side face of the source and drainelectrode layers, and a side face (an inner side face) of a lowerportion (second portion) of the source and drain regions exists in thesame plane as or substantially the same plane as a side face of thebuffer layer (see FIG. 12C). By this etching process, the impuritysemiconductor layer may be nearly stepwise-shaped in some cases. In thismanner, the thin film transistor can be manufactured.

Although not illustrated, an insulating layer may be formed later so asto cover the thin film transistor, in a manner similar to the othermethods described above, and an opening portion may be formed in theinsulating layer and one of the source and drain electrodes may beconnected to a pixel electrode through the opening portion. In thismanner, a pixel transistor can be manufactured.

Note that even when the multi-tone mask is used, similar to the methoddescribed with reference to FIGS. 7A to 7C, the impurity semiconductorlayer and the buffer layer may be partially etched using the source anddrain electrodes as masks, so that the source region and the drainregion are separated. In this case, the conductive layer is etched usinga resist mask so that the source and drain electrodes are formed (seeFIG. 13A).

Then, the impurity semiconductor layer and the buffer layer arepartially etched using the source and drain electrodes as masks so as toseparate the source region and the drain region from each other. By thisstep, the source and drain regions are formed so that the back channelportion is formed (see FIG. 13B).

However, in a manner similar to those of other manufacturing methods,also in the above manufacturing method, residual products caused by theetching process, residues of the resist mask, substances which can becontamination sources in an apparatus which has been used for removal ofthe resist mask, substances included in the remover solution which hasbeen used for removal of the resist mask, and the like are attached ordeposited over the depression portion of the buffer layer between thesource region and the drain region (the back channel portion), and thusby conduction through the residual products, residues, and substances,off current is increased in many elements, which leads to variation inelectric characteristics between the elements over the same substrate inmany cases. This trend is apparent especially when a remover solutionincluding sulfur is used for removal of the resist mask. The removersolution including sulfur is often used in the process for removing theresist mask. As an example of such a remover solution, a removersolution including alkylbenzene sulfonate can be given.

Therefore, in order to solve the above problem, dry etching (slightetching) is further conducted. By slight etching, substances included inthe remover solution, residues of the resist mask, and the like whichexist in the back channel portion can be removed, and insulation betweenthe source region and the drain region can be secured. The etchingcondition is set such that the exposed amorphous semiconductor layer isnot damaged and the etching rate to the amorphous semiconductor layer islow. In other words, a condition which gives almost no damages to thesurface of the exposed amorphous semiconductor layer (a surface layer ofthe back channel portion) and does not reduce the thickness of theamorphous semiconductor layer may be applied. At this time, a gas whichis capable of effectively removing substances included in the removersolution and residues of the resist mask may be used as the etching gas.For example, as described in Embodiment 1, an N₂ gas or a CF₄ gas may beused. An inductively-coupled plasma etching method is preferablyemployed for the etching. As an example of the etching condition, when aCF₄ gas is used, the gas flow rate is 100 sccm, the pressure of achamber is 0.67 Pa, the temperature of a lower electrode is −10° C., thetemperature of the side wall of the chamber is about 80° C., and an RFpower (13.56 MHz) of 1000 W is applied to a coiled electrode to generateplasma while no power is applied to a substrate side (i.e., 0 W,non-biased). On the condition, etching may be conducted for thirtyseconds. Alternatively, when an N₂ gas is used, the gas flow rate is 100sccm, the pressure of a chamber is 0.67 Pa, the temperature of a lowerelectrode is −10° C., the temperature of the side wall of the chamber isabout 80° C., and an RF power (13.56 MHz) of 3000 W is applied to acoiled electrode to generate plasma while a power of 50 W is applied toa substrate side. On the condition, etching may be conducted for sixtyseconds. Note that here, when a CF₄ gas is used, the amount of appliedpower and the period of time for conducting etching are set to besmaller than those when an N₂ gas is used. This is because silicon ishardly etched when an N₂ gas is used while the etching rate to siliconis high when a CF₄ gas is used. By this etching, the hydrophilic groupincluding sulfur or the like contained in the remover solution isremoved, for example.

There is no particular limitation on an etching method, and acapacitively coupled plasma (CCP) method, an electron cyclotronresonance (ECR) method, or a reactive ion etching (RIE) method, or thelike can be used, as well as an inductively coupled plasma (ICP) method.

Note that the slight etching is preferably conducted by a discontinuousdischarge, more preferably pulsed discharge, not by a continuousdischarge. When the slight etching is conducted using pulsed discharge,charge-up damage generated in the back channel portion which issubjected to etching can be reduced. By reducing the charge-up damage inthe back channel portion, leakage current can be reduced between thesource electrode and the drain electrode. Accordingly, by pulseddischarge, off current can be further reduced and thus switchingcharacteristics can be improved.

The aforementioned etching can remove residues of the resist mask,substances included in the remover solution used in the removal process,and the like which exist over the depression portion of the buffer layerbetween the source region and the drain region (the back channelportion). In addition, by this etching process, the impuritysemiconductor layer not overlapping the source and drain electrodelayers is slightly etched. In the above etching condition, the impuritysemiconductor layer is etched by, for example about greater than orequal to 0 nm and less than or equal to 5 nm. Accordingly, in the thinfilm transistor manufactured by the aforementioned method, a side face(an inner side face) of an upper portion (first portion) of the sourceand drain regions exists in the same plane as or substantially the sameplane as a side face of the source and drain electrode layers, and aside face (an inner side face) of a lower portion (second portion) ofthe source and drain regions exists in the same plane as orsubstantially the same plane as a side face of the buffer layer (seeFIG. 10B). By this etching process, the impurity semiconductor layer maybe nearly stepwise-shaped in some cases.

FIG. 14 illustrates a pixel transistor, similar to FIG. 1. The pixeltransistor illustrated in FIG. 14 includes a semiconductor layer (e.g.,a microcrystalline semiconductor layer), a buffer layer (an amorphoussemiconductor layer), and an impurity semiconductor layer under thesource and drain electrode layers, unlike the pixel transistorillustrated in FIG. 1.

As described in this embodiment, in the manufacturing method using amulti-tone mask, as illustrated in FIG. 14, under source and drainelectrode layers, the semiconductor layer (e.g., a microcrystallinesemiconductor layer), the buffer layer (an amorphous semiconductorlayer), and the impurity semiconductor layer are formed. This similarlyapplies to a case where the manufacturing method described in Embodiment2 with reference to FIGS. 7A to 7C and FIGS. 8A and 8B is employed.

As described above, in the method for manufacturing the thin filmtransistor which is one embodiment of the present invention, amulti-tone mask can be used. By use of the multi-tone mask, the numberof steps can be decreased. Further, a thin film transistor havingexcellent electric characteristics can be manufactured at high yieldsimilar to the other embodiments described above. Further, variationbetween the manufactured thin film transistors is small. Accordingly, itis extremely effective that a multi-tone mask is used for the method formanufacturing the thin film transistor which is one embodiment of thepresent invention.

In addition, another method for manufacturing a thin film transistorusing a multi-tone mask is described below.

When the multi-tone mask is used as described above, all layers of froma gate electrode to a pixel electrode can be formed using threephotomasks. However, even without using the multi-tone mask, the alllayers of from the gate electrode to the pixel electrode can be formedusing three photomasks. A method for manufacturing a thin filmtransistor, in which from the gate electrode to the pixel electrode canbe formed using three photomasks, instead of using the multi-tone mask,is described below.

First, similar to FIG. 11A, a stacked body in which the steps up to andincluding the formation of a conductive layer are completed is formed.Then, a resist mask is formed over the stacked body (see FIG. 17A). Notethat one photomask is used in order to form a gate electrode layer.

Next, a conductive layer, a semiconductor layer (e.g., amicrocrystalline semiconductor layer), an amorphous semiconductor layer,and an impurity semiconductor layer are etched using the resist mask soas to be separated corresponding to each element. The etching may be dryetching or wet etching (see FIG. 17B).

Then, a pixel electrode layer is formed over the separated conductivelayer for each element (see FIG. 17C), and a resist mask is formed overthe pixel electrode layer (see FIG. 18A). In this case, the pixelelectrode layer is formed using indium tin oxide (ITO) typically. Byusing this resist mask, etching is conducted for patterning the pixelelectrode layer, and the impurity semiconductor layer and a buffer layerare partially etched so that the source region and the drain region areseparated from each other. By this step, the source and drain regionsare formed so that a back channel portion is formed (see FIG. 18B).After that, the resist mask is removed (see FIG. 18C).

However, in a manner similar to those of other manufacturing methods,also in the above manufacturing method, residual products caused by theetching process, residues of the resist mask, substances which can becontamination sources in an apparatus which has been used for removal ofthe resist mask, substances included in the remover solution which hasbeen used for removal of the resist mask, and the like are attached ordeposited over the depression portion of the buffer layer between thesource region and the drain region (the back channel portion), and thusby conduction through the residual products, residues, and substances,off current is increased in many elements, which leads to variation inelectric characteristics between the elements over the same substrate inmany cases. This trend is apparent especially when a remover solutionincluding sulfur is used for removal of the resist mask. The removersolution including sulfur is often used in the process for removing theresist mask. As an example of such a remover solution, a removersolution including alkylbenzene sulfonate can be given.

Therefore, in order to solve the above problem, dry etching (slightetching) is further conducted. By slight etching, substances included inthe remover solution, residues of the resist mask, and the like whichexist in the back channel portion can be removed, and insulation betweenthe source region and the drain region can be secured. The etchingcondition is set such that the exposed amorphous semiconductor layer isnot damaged and the etching rate to the amorphous semiconductor layer islow. In other words, a condition which gives almost no damages to thesurface of the exposed amorphous semiconductor layer (a surface layer ofthe back channel portion) and does not reduce the thickness of theamorphous semiconductor layer may be applied. At this time, a gas whichis capable of effectively removing substances included in the removersolution and residues of the resist mask may be used as the etching gas.For example, as described in Embodiment 1, an N₂ gas or a CF₄ gas may beused. An inductively-coupled plasma etching method is preferablyemployed for the etching. As an example of the etching condition, when aCF₄ gas is used, the gas flow rate is 100 sccm, the pressure of achamber is 0.67 Pa, the temperature of a lower electrode is −10° C., thetemperature of the side wall of the chamber is about 80° C., and an RFpower (13.56 MHz) of 1000 W is applied to a coiled electrode to generateplasma while no power is applied to a substrate side (i.e., 0 W,non-biased). On the condition, etching may be conducted for thirtyseconds. Alternatively, when an N₂ gas is used, the gas flow rate is 100sccm, the pressure of a chamber is 0.67 Pa, the temperature of a lowerelectrode is −10° C., the temperature of the side wall of the chamber isabout 80° C., and an RF power (13.56 MHz) of 3000 W is applied to acoiled electrode to generate plasma while a power of 50 W is applied toa substrate side. On the condition, etching may be conducted for sixtyseconds. Note that here, when a CF₄ gas is used, the amount of appliedpower and the period of time for conducting etching are set to besmaller than those when an N₂ gas is used. This is because silicon ishardly etched when an N₂ gas is used while the etching rate to siliconis high when a CF₄ gas is used. By this etching, the hydrophilic groupincluding sulfur or the like contained in the remover solution isremoved, for example.

There is no particular limitation on an etching method, and acapacitively coupled plasma (CCP) method, an electron cyclotronresonance (ECR) method, or a reactive ion etching (RIE) method, or thelike can be used, as well as an inductively coupled plasma (ICP) method.

Note that the slight etching is preferably conducted by a discontinuousdischarge, more preferably pulsed discharge, not by a continuousdischarge. When the slight etching is conducted using pulsed discharge,charge-up damage generated in the back channel portion which issubjected to etching can be reduced. By reducing the charge-up damage inthe back channel portion, leakage current can be reduced between thesource electrode and the drain electrode. Accordingly, by pulseddischarge, off current can be further reduced and thus switchingcharacteristics can be improved.

The aforementioned etching can remove residues of the resist mask,substances included in the remover solution used in the removal process,and the like which exist over the depression portion of the buffer layerbetween the source region and the drain region (the back channelportion). In addition, by this etching process, the impuritysemiconductor layer not overlapping the source and drain electrodelayers is slightly etched. In the above etching condition, the impuritysemiconductor layer is etched by, for example about greater than orequal to 0 nm and less than or equal to 5 nm. Accordingly, in the thinfilm transistor manufactured by the aforementioned method, a side face(an inner side face) of an upper portion (first portion) of the sourceand drain regions exists in the same plane as or substantially the sameplane as a side face of the source and drain electrode layers, and aside face (an inner side face) of a lower portion (second portion) ofthe source and drain regions exists in the same plane as orsubstantially the same plane as a side face of the buffer layer (seeFIG. 13C). By this etching process, the impurity semiconductor layer maybe nearly stepwise-shaped in some cases.

As described above, the method for manufacturing the thin filmtransistor which is one embodiment of the present invention is notlimited to the methods described in Embodiments 1 and 2, and can beemployed for a wide variety of methods for manufacturing thin filmtransistors.

Embodiment 4

The method for manufacturing the thin film transistor which is oneembodiment of the present invention can be applied not only to thin filmtransistors using a microcrystalline semiconductor layer or the likedescribed in Embodiments 1 to 3 but also to an inversely-staggered thinfilm transistor having only an amorphous semiconductor layer (only thebuffer layer in Embodiment 1).

Even in the case of an inversely-staggered thin film transistor usingonly an amorphous semiconductor as a semiconductor layer, the method formanufacturing the thin film transistor is similar to those described inEmbodiments 1 to 3. However, the thin film transistor does not include alayer typified by the semiconductor layer 106 as described in Embodiment1 or another embodiment.

FIG. 15 illustrates an inversely-staggered thin film transistor whichuses only an amorphous semiconductor layer as a semiconductor layer andis manufactured in a manner similar to that of FIG. 1. In addition, FIG.16 illustrates an inversely-staggered thin film transistor which ismanufactured using only an amorphous semiconductor as a semiconductorlayer and is manufactured using a multi-tone mask similar to FIG. 14. Inthis manner, even in the case of the inversely-staggered thin filmtransistor using only an amorphous semiconductor layer as asemiconductor layer, a thin film transistor having excellent electriccharacteristics can be manufactured at low cost at high yield. Inaddition, variation in electric characteristics between elements formedover the same substrate can be made small.

Embodiment 5

In this embodiment, a liquid crystal display device including a thinfilm transistor manufactured according to any of the above embodimentsis described.

First, a VA (vertical alignment) mode liquid crystal display device isdescribed. A VA-mode is a mode in which longitudinal axes of liquidcrystal molecules are vertical to a panel surface when voltage is notapplied. In particular, in this embodiment, it is devised that a pixelis divided into several regions (subpixels) so that molecules arealigned in different directions. This is referred to as domainmultiplication or multi-domain. In the following description, amulti-domain liquid crystal display device is described.

FIG. 20 is a top plan view of a side of a substrate over which a pixelelectrode is formed. FIG. 19 illustrates a cross-sectional structuretaken along the line A-B in FIG. 20. In addition, FIG. 21 is a top planview of a side of a substrate on which a counter electrode is formed.

FIG. 19 illustrates a state in which a substrate 300 and a substrate 301which is opposite to the substrate 300 face with each other, and liquidcrystals are injected therebetween. A thin film transistor 328, a pixelelectrode 324 connected to a source electrode layer or a drain electrodelayer of the thin film transistor 328, and a storage capacitor portion330 are provided over the substrate 300. The substrate 301 is providedwith a counter electrode 340.

At a position where a spacer 342 is formed over the substrate 301, alight-shielding layer 332, a first colored layer 334, a second coloredlayer 336, a third colored layer 338, and the counter electrode 340 areformed. With the structure in which the colored layers are stacked in aregion in which the spacer 342 is formed, the height of a protrusion 344for controlling alignment of the liquid crystals and the height of thespacer 342 are different from each other. An alignment film 348 isformed over the pixel electrode 324. An alignment film 346 is providedin contact with the counter electrode 340. A liquid crystal layer 350 isprovided between the alignment film 346 and the alignment film 348.

Although a post spacer (a columnar spacer) is used as the spacer 342 inFIG. 19, the present invention is not limited to this. A bead spacer (aspherical spacer) may be dispersed as the spacer. Further, the spacer342 may be provided on the pixel electrode 324 provided over thesubstrate 300.

The thin film transistor 328, the pixel electrode 324 connected to thethin film transistor 328, and the storage capacitor portion 330 areprovided over the substrate 300. The pixel electrode 324 and a wiring318 are connected through an opening portion 323 which penetrates aninsulating layer 320 and an insulating layer 322. The insulating layer320 is provided so as to cover the thin film transistor 328, the wiring318, and the storage capacitor portion 330. The insulating layer 322 isprovided so as to cover the insulating layer 320. The thin filmtransistor 328 can be manufactured by any of the methods described inthe above embodiments (e.g., Embodiment 1). In addition, the storagecapacitor portion 330 is formed by sandwiching a gate insulating layerof the thin film transistor 328 between a conductive layer which isformed in the same step and in a manner similar to that of a gateelectrode of the thin film transistor 328 and a scan line, and aconductive layer which is formed in the same step and in a mannersimilar to that of a source electrode of the thin film transistor 328and a signal line.

A liquid crystal element is formed by overlapping of the pixel electrode324 which has the alignment film 348, the counter electrode 340 whichhas the alignment film 346, and the liquid crystal layer 350 interposedtherebetween.

FIG. 20 is a top plan view of the substrate 300 side. The pixelelectrode 324 is formed using a material similar to that of the pixelelectrode layer 118 described in Embodiment 1. The pixel electrode 324is provided with a slit 325. The slit 325 is used for controllingalignment of the liquid crystals.

A thin film transistor 329 illustrated in FIG. 20 can be formed in amanner similar to that of the thin film transistor 328. The pixelelectrode 326 connected to the thin film transistor 329 can be formed bya material and a method similar to those of the pixel electrode 324. Inaddition, a storage capacitor portion 331 can be formed in a mannersimilar to that of the storage capacitor portion 330.

Sources or drains of the thin film transistor 328 and the thin filmtransistor 329 are connected to a wiring 316. One pixel of this liquidcrystal panel includes the pixel electrode 324 and the pixel electrode326. The pixel electrode 324 and the pixel electrode 326 constitutesubpixels.

FIG. 21 is a top plan view of the substrate 301 side. The counterelectrode 340 is provided above the light-shielding layer 332. Thecounter electrode 340 is preferably formed using a material which issimilar to that of the pixel electrode 324. The protrusion 344 forcontrolling alignment of the liquid crystals is provided in contact withthe counter electrode 340. In addition, the spacer 342 is provided in apredetermined region overlapping with the light-shielding layer 332.Note that in FIG. 21, hatching is done only on the light-shielding layer332, the spacer 342, and the protrusion 344.

FIG. 22 illustrates an equivalent circuit of the above-described pixelstructure. Gates of the thin film transistor 328 and the thin filmtransistor 329 are both connected to a wiring 302 functioning as a scanline. One of a source and a drain each of the thin film transistor 328and the thin film transistor 329 is connected to the wiring 316, and theother thereof is connected to the wiring 304 and the wiring 305 via thestorage capacitor portion 330 or the storage capacitor portion 331. InFIG. 22, when a potential of a wiring 304 functioning as a capacitorline and a potential of a wiring 305 functioning as a capacitor line aredifferent, operations of a liquid crystal element 351 and a liquidcrystal element 352 can be different. That is, the viewing angle isincreased by individually controlling the potentials of the wiring 304and the wiring 305.

When voltage is applied to the pixel electrode 324 provided with theslit 325 (the potential of the pixel electrode 324 is different from thepotential of the counter electrode 340), electric field distortion isgenerated near the slit 325 to produce an oblique electric field. Whenthe slits 325 and the protrusions 344 on the substrate 301 side arealternately provided, an oblique electric field is effectivelygenerated, so that alignment of the liquid crystals can be controlled.Therefore, directions of alignment of the liquid crystals are made to bedifferent depending on location. That is, the viewing angle of theliquid crystal panel is increased by domain multiplication.

Next, a VA-mode liquid crystal display device, which is different fromthe above-described device, is described with reference to FIGS. 23 to26.

FIG. 24 is a top plan view of a side of a substrate over which a pixelelectrode is formed. FIG. 23 illustrates a cross-sectional structuretaken along the line C-D in FIG. 24. In addition, FIG. 25 is a top planview of a side of a substrate on which a counter electrode is formed.The following description is made with reference to these drawings.

In each pixel of the liquid crystal display device, which is illustratedin FIGS. 23 to 26, one pixel includes a plurality of pixel electrodesand a thin film transistor is connected to each of the plurality ofpixel electrodes. That is, the pixel is a multi-domain pixel. The thinfilm transistors are driven by different gate signals. In other words,signals supplied to the respective pixel electrodes can be controlledseparately (see FIG. 26).

A pixel electrode 424 is connected to a thin film transistor 428 by awiring 418 through an opening portion 423. A pixel electrode 426 isconnected to a thin film transistor 429 by a wiring 419 through anopening portion 427. A wiring 402 functioning as a scan line which isconnected to a gate electrode of the thin film transistor 428 and awiring 403 functioning as a scan line which is connected to a gateelectrode of the thin film transistor 429 are separated so thatdifferent gate signals can be supplied to the gate electrodes. On theother hand, as for a signal line, a wiring 416 is shared between thethin film transistor 428 and the thin film transistor 429. As for eachof the thin film transistor 428 and the thin film transistor 429, a thinfilm transistor formed according to a manufacturing method of theabove-described embodiments can be used as appropriate.

Note that a storage capacitor portion 430 is connected to the thin filmtransistor 428. A storage capacitor portion 431 is connected to the thinfilm transistor 429. The storage capacitor portion 430 includes thewiring 409, the wiring 418, and the insulating layer 406 interposedtherebetween. The storage capacitor portion 431 includes the wiring 409,the wiring 419, and the insulating layer 406 interposed therebetween.The insulating layer 406 serves as gate insulating layers of the thinfilm transistor 428 and the thin film transistor 429.

Note that an opening portion 423 and an opening portion 427 are formedso as to penetrate the insulating layer 420 and the insulating layer 422formed covering the thin film transistor 428 and the thin filmtransistor 429.

Note that the wiring 409 serves as a capacitor line, and is kept at aconstant potential (common potential).

The pixel electrode 424 and the pixel electrode 426 have differentshapes (see FIG. 24) and are separated by the slit 425. Specifically,the pixel electrode 426 is provided so as to surround the external sideof the pixel electrode 424 which is spread in a V shape. Timings ofvoltage application are varied between the pixel electrode 424 and thepixel electrode 426 by using the thin film transistor 428 and the thinfilm transistor 429, so that alignment of liquid crystals can becontrolled. FIG. 26 illustrates an equivalent circuit of this pixelstructure. When different gate signals are supplied to the wiring 402and the wiring 403, operation timings of the thin film transistor 428and the thin film transistor 429 can be varied.

A substrate 401 which is opposite to the substrate 400 is provided witha light-shielding layer 432, a colored layer 436, and a counterelectrode 440. In addition, a planarization layer 437 is formed betweenthe colored layer 436 and the counter electrode 440 and preventsalignment disorder of the liquid crystals. FIG. 25 is a top plan view ofthe counter substrate side. The counter electrode 440 is shared betweendifferent pixels and is provided with a slit 441. When the slit 441 andthe slit 425 on the pixel electrodes 424 and 426 side are alternatelyprovided, an oblique electric field is effectively generated, so thatalignment of the liquid crystals can be controlled. Therefore,directions of alignment of the liquid crystals can be different in afirst liquid crystal element 451 and a second liquid crystal element452, and a wide viewing angle can be realized.

The first liquid crystal element 451 is formed by overlapping of thepixel electrode 424 having an alignment film 448, a liquid crystal layer450, and the counter electrode 440 having an alignment film 446. Inaddition, the second liquid crystal element 452 is formed by overlappingof the pixel electrode 426 having the alignment film 448, the liquidcrystal layer 450, and the counter electrode 440 having an alignmentfilm 446. Therefore, in each of the pixel structures illustrated inFIGS. 23 to 26, a multi-domain structure in which the first liquidcrystal element 451 and the second liquid crystal element 452 areprovided in one pixel is formed.

The thin film transistor described in the above embodiments can also beapplied to a horizontal electric field-mode liquid crystal displaydevice. A horizontal electric field-mode is a mode in which a liquidcrystal element is driven to express grayscale by horizontally applyingan electric field to liquid crystal molecules in a cell. In accordancewith a horizontal electric field-mode, the viewing angle can be widenedto approximately 180 degrees. A horizontal electric field-mode liquidcrystal display device is described below with reference to FIGS. 27 and28.

FIG. 27 illustrates a state in which a substrate 500 over which a thinfilm transistor 528 and a pixel electrode 524 connected to the thin filmtransistor 528 are provided and a substrate 501 which is opposite to thesubstrate 500 face with each other, and liquid crystals are injectedtherebetween. The substrate 501 is provided with a light-shielding layer532, a colored layer 536, and a planarization layer 537. Although apixel electrode is provided over the substrate 500, a counter electrodeis not provided on the substrate 501. A liquid crystal layer 550 isprovided by injection of liquid crystals between the substrate 500 andthe substrate 501. Note that the substrate 500 has an alignment film548, the substrate 501 has an alignment film 546, and the alignment film546 and the alignment film 548 are provided in contact with the liquidcrystal layer 550.

A counter electrode 507, a wiring 504 functioning as a capacitor linewhich is connected to the counter electrode 507, and the thin filmtransistor 528 are formed over the substrate 500. A thin film transistorformed according to a manufacturing method described in any of the aboveembodiments (e.g., Embodiment 1) can be used as the thin film transistor528 as appropriate. The counter electrode 507 can be formed using amaterial which is similar to that of the pixel electrode layer 118described in Embodiment 1. In addition, the counter electrode 507 isformed in a shape which is compartmentalized roughly in a pixel shape.Note that a first insulating layer 506 is formed over the counterelectrode 507 and the wiring 504. The first insulating layer 506 isformed over the wiring 502 serving as a gate electrode of the thin filmtransistor 528, and the first insulating layer 506 serves as a gateinsulating layer of the thin film transistor 528.

A source electrode and a drain electrode of the thin film transistor 528and a wiring 516 and a wiring 518 which are connected to the sourceelectrode and the drain electrode of the thin film transistor 528 areformed over the first insulating layer 506. The wiring 516 is a signalline to which a video signal is input in a liquid crystal displaydevice. The wiring 516 is a wiring extending in one direction, isconnected to one of source and drain regions of the thin film transistor528 and serves as one of the source electrode and the drain electrode ofthe thin film transistor 528. The wiring 518 is connected to the otherof the source electrode and the drain electrode and the pixel electrode524.

A second insulating layer 520 is formed over the wiring 516 and thewiring 518. In addition, the pixel electrode 524 connected to the wiring518 through an opening portion 523 formed in the second insulating layer520 is provided over the second insulating layer 520. The pixelelectrode 524 is formed using a material which is similar to that of thepixel electrode layer 118 described in Embodiment 1.

As described above, the thin film transistor 528 and the pixel electrode524 connected to the thin film transistor 528 are provided over thesubstrate 500. Note that a storage capacitor is formed between thecounter electrode 507 and the pixel electrode 524.

FIG. 28 is a plan view showing the structure of the pixel electrodes.The pixel electrode 524 is provided with a slit 525. The slit 525 isused for controlling alignment of the liquid crystals. In this case, anelectric field is generated between the counter electrode 507 and thepixel electrode 524. The first insulating layer 506 is formed betweenthe counter electrode 507 and the pixel electrode 524 and has athickness of about greater than or equal to 50 nm and less than or equalto 200 nm, which is much thinner than the liquid crystal layer having athickness of about greater than or equal to 2 μm and less than or equalto 10 μm. Accordingly, an electric field is generated in a paralleldirection (in a horizontal direction) to the substrate 500. Alignment ofthe liquid crystals is controlled by the electric field. The liquidcrystal molecules are horizontally rotated by utilizing the electricfield which is approximately parallel to the substrate. In this case,because the liquid crystal molecules are parallel to the substrate inany state, contrast or the like is hardly affected by change in angle ofviewing. That is, a wide viewing angle can be realized. Further, becauseboth the counter electrode 507 and the pixel electrode 524 arelight-transmitting electrodes, a high aperture ratio can be obtained.

Next, a horizontal electric field-mode liquid crystal display device,which is different from the aforementioned device, is described withreference to FIG. 29 and FIG. 30.

FIG. 29 and FIG. 30 each show a pixel structure of a horizontal-electricfield mode liquid crystal display device. FIG. 30 is a top plan view.FIG. 29 illustrates a cross-sectional structure taken along the line G-Hin FIG. 30.

FIG. 29 illustrates a state in which a substrate 600 over which a thinfilm transistor 628 and a pixel electrode 624 connected to the thin filmtransistor 628 are provided, a substrate 601 which is opposite to thesubstrate 600 face with each other, and liquid crystals are injectedtherebetween. The substrate 601 is provided with a light-shielding layer632, a colored layer 636, a planarization layer 637, and the like.Although a pixel electrode is provided over the substrate 600, a pixelelectrode is not provided on the substrate 601. A liquid crystal layer650 is provided by injection of liquid crystals between the substrate600 and the substrate 601. Note that the substrate 600 has an alignmentfilm 648, the substrate 601 has the alignment film 646, and thealignment film 646 and the alignment film 648 are provided in contactwith the liquid crystal layer 650.

The substrate 600 is provided with a wiring 609 kept at a commonpotential and the thin film transistor 628 manufactured according to anyof the methods described in the above embodiments (e.g., Embodiment 1).The wiring 609 can be formed in the same step and at the same time as ascan line 602 of the thin film transistor 628. A counter electrode(common electrode) is formed in the same layer as the wiring 609 andformed in a shape which is compartmentalized roughly in a pixel shape.

A wiring 616 and a wiring 618 which each are connected to a sourceelectrode and a drain electrode of the thin film transistor 628 areformed over a first insulating layer 606. Note that the first insulatinglayer 606 serves as a gate insulating film of the thin film transistor628. The wiring 616 is a signal line to which a video signal is input ina liquid crystal display device. The wiring 616 is a wiring extending inone direction, is connected to one of source and drain regions of thethin film transistor 628, and serves as one of the source and drainelectrodes thereof. The wiring 618 is connected to the other of thesource and drain electrodes and the pixel electrode 624. Note that athin film transistor manufactured according to any of the methods in theabove embodiments can be used as the thin film transistor 628 asappropriate.

A second insulating layer 620 is formed over the wiring 616 and thewiring 618. In addition, the pixel electrode 624 connected to the wiring618 through an opening portion 623 formed in the second insulating layer620 is formed over the second insulating layer 620. The pixel electrode624 is formed using a material which is similar to that of the pixelelectrode layer 118 described in Embodiment 1. Note that as illustratedin FIG. 30, the pixel electrode 624 is formed so as to generate ahorizontal electric field between the pixel electrode 624 and acomb-shaped electrode which is formed at the same time as the wiring609. Further, the pixel electrode 624 is formed so that comb-shapedportions of the pixel electrode 624 and the counter electrode (commonelectrode) which is formed at the same time as the wiring 609 arealternately provided.

Alignment of the liquid crystals can be controlled by an electric fieldwhich is approximately parallel to the substrate and is generated by apotential difference between a potential applied to the pixel electrode624 and a potential of the wiring 609. The liquid crystal molecules arehorizontally rotated by utilizing the electric field which isapproximately parallel to the substrate, whereby the alignment of theliquid crystals can be controlled. In this case, because thelongitudinal axes of the liquid crystal molecules are almost parallel tothe substrate in any state, contrast or the like is hardly affected bychange in angle of viewing. Therefore, a wide viewing angle can berealized.

As described above, the thin film transistor 628 and the pixel electrode624 connected to the thin film transistor 628 are provided over thesubstrate 600. A storage capacitor is formed by providing the firstinsulating layer 606 between the wiring 609 and a capacitor electrode615. The capacitor electrode 615 that is formed using the same layer asthe wiring 616 and the like and the pixel electrode 624 are connectedthrough the opening portion 623.

The present invention can also be applied to a TN-mode liquid crystaldisplay device. Thus, a mode of a TN-mode liquid crystal display deviceis described below with reference to FIG. 31 and FIG. 32.

FIG. 31 and FIG. 32 each illustrate a pixel structure of a TN-modeliquid crystal display device. FIG. 32 is a top plan view. FIG. 31illustrates a cross-sectional structure taken along the line I-J in FIG.32. The following description is made with reference to FIG. 31 and FIG.32.

Over a substrate 700, a pixel electrode 724 is connected to a thin filmtransistor 728 by a wiring 718 through an opening portion 723. Thewiring 716 functioning as a signal line is connected to the thin filmtransistor 728. The wiring 702 serves as a scan line. Note that a thinfilm transistor manufactured according to any of the methods describedin the above embodiments (e.g., Embodiment 1) can be used as the thinfilm transistor 728 as appropriate.

The pixel electrode 724 is formed using a material which is similar tothat of the pixel electrode layer 118 described in Embodiment 1.

A substrate 701 opposite to the substrate 700 is provided with alight-shielding layer 732, a colored layer 736, and a counter electrode740. In addition, a planarization layer 737 is formed between thecolored layer 736 and the counter electrode 740 and prevents alignmentdisorder of the liquid crystals. A liquid crystal layer 750 is providedbetween the pixel electrode 724 and the counter electrode 740. Note thatan alignment film 748 is provided between the liquid crystal layer 750and the pixel electrode 724, and an alignment film 746 is providedbetween the liquid crystal layer 750 and the counter electrode 740.

A liquid crystal element is formed by overlapping of the pixel electrode724, the liquid crystal layer 750, and the counter electrode 740.

A shielding layer (a black matrix) or a colored layer serving as a colorfilter may be provided over a substrate 700. Further, a polarizing plateis attached to a surface (rear surface) of the substrate 700, which isopposite to a surface over which the thin film transistor and the likeare provided. A polarizing plate is attached to a surface (rear surface)of the substrate 701, which is opposite to a surface on which thecounter electrode 740 and the like are provided.

A material which is similar to that of the pixel electrode 724 can beused for the counter electrode 740 as appropriate. A liquid crystalelement is formed by overlapping of the pixel electrode 724, the liquidcrystal layer 750, and the counter electrode 740.

The storage capacitor includes a wiring 704, a wiring 715, and aninsulating film 720 interposed therebetween.

Note that in the referred drawings in the above description, gateelectrodes and scan lines are formed in the same layers and are denotedby the same reference numerals. Similarly, source electrodes, drainelectrodes, and signal lines are formed in the same layers and aredenoted by the same reference numerals.

Through the above steps, the liquid crystal display device can bemanufactured. The thin film transistor included in the liquid crystaldisplay device in this embodiment is manufactured according to any ofthe methods described in the above embodiments. Therefore, because thethin film transistor has a low off current and excellent electriccharacteristics, the liquid crystal display device described in thisembodiment can have high contrast and high visibility.

Embodiment 6

The thin film transistors described in the above embodiments can beapplied not only to a liquid crystal display device but also alight-emitting device. In this embodiment, a process for manufacturinglight-emitting devices are described with reference to FIGS. 33A and 33Band FIGS. 34A to 34C. A light-emitting element utilizingelectroluminescence is used for a light-emitting device. Light-emittingelements utilizing electroluminescence are classified according towhether a light-emitting material is an organic compound or an inorganiccompound. In general, the former is referred to as organic EL elementsand the latter as inorganic EL elements.

In an organic EL element, when voltage is applied to a light-emittingelement, carriers (electrons and holes) are injected from a pair ofelectrodes into a layer containing a light-emitting organic compound,and current flows therein. Then, recombination of these carriers (theelectrons and holes) allows the light-emitting organic compound to forman excited state and to emit light when the carriers in the organiccompound return from the excited state to a ground state. Due to such amechanism, such a light-emitting element is referred to as acurrent-excitation type light-emitting element.

Inorganic EL elements are classified into a dispersion type inorganic ELelement and a thin-film type inorganic EL element depending on theirelement structures. A dispersion type inorganic EL element has alight-emitting layer where particles of a light-emitting material aredispersed in a binder, and its light emission mechanism isdonor-acceptor recombination type light emission which utilizes a donorlevel and an acceptor level. A thin-film type inorganic EL element has astructure where a light-emitting layer is sandwiched between dielectriclayers, which are further sandwiched between a pair of electrodes, andits light emission mechanism is localized type light emission whichutilizes inner-shell electron transition of metal ions.

Note that description is made here using an organic EL element as alight-emitting element. In addition, a thin film transistor manufacturedaccording to any of the methods described in the above embodiments isused as a thin film transistor which controls driving of alight-emitting element.

A thin film transistor 801 and a thin film transistor 802 are formedover a substrate 800, as illustrated in FIG. 33A. In FIG. 33A, aninsulating layer 803 functioning as a protective layer is formed overthe thin film transistors 801 and 802, and an insulating layer 804 isformed over the insulating layer 803. The insulating layer 804 isprovided for flattening a top surface. The insulating layer 803 may beformed using silicon oxide, silicon nitride, silicon oxynitride, or thelike, for example. The insulating layer 804 is preferably formed usingan organic resin such as acrylic, polyimide, or polyamide, or siloxane.

A conductive layer 805 is formed over the insulating layer 804. Theconductive layer 805 functions as a pixel electrode. When the thin filmtransistor of a pixel is an n-channel thin film transistor, it ispreferable to form a cathode as the pixel electrode. On the other hand,when the thin film transistor is a p-channel thin film transistor, it ispreferable to form an anode as the pixel electrode. Specifically, when acathode is formed as a pixel electrode, a material with low workfunction, such as Ca, Al, CaF, MgAg, or AlLi, may be used.

Next, as illustrated in FIG. 33B, a partition 806 is formed over theinsulating layer 804 and a side face (an end portion) of the conductivelayer 805. The partition 806 has an opening portion and the conductivelayer 805 is exposed through the opening portion. The partition 806 isformed with an organic resin layer, an inorganic insulating layer, ororganic polysiloxane. More preferably, the partition 806 is formed usinga photosensitive material, the partition 806 over the conductive layer805 is exposed to light so that an opening portion is formed. In thiscase, a sidewall of the opening portion is preferably formed as a tiltedsurface with continuous curvature.

Next, a light-emitting layer 807 is formed so as to be in contact withthe conductive layer 805 in the opening portion of the partition 806.The light-emitting layer 807 may be formed with either a single-layerstructure or a stacked-layer structure of a plurality of layers.

Then, a conductive layer 808 is formed so as to cover the light-emittinglayer 807. The conductive layer 808 is referred to as a commonelectrode. When the conductive layer 805 is formed using a material fora cathode, the conductive layer 808 is formed using a material used toform an anode. The conductive layer 808 can be formed using alight-transmitting conductive layer using any of the light-transmittingconductive materials described in Embodiment 1 for the pixel electrodelayer 118. As the conductive layer 808, a titanium nitride layer or atitanium layer may be used. In FIG. 33B, indium tin oxide (ITO) is usedfor the conductive layer 808. In the opening portion of the partition806, a light-emitting element 809 is formed by overlapping of theconductive layer 805, the light-emitting layer 807, and the conductivelayer 808. After that, it is preferable to form a protective layer 810over the conductive layer 808 and the partition 806 so that oxygen,hydrogen, moisture, carbon dioxide, and the like cannot enter thelight-emitting element 809. As the protective layer 810, a siliconnitride layer, a silicon nitride oxide layer, a DLC layer, or the likecan be used.

More preferably, after the completion of the steps up to and includingthe step illustrated in FIG. 33B, packaging (encapsulation) is performedusing a protective film (an ultraviolet curable resin film or the like)or a cover material, which has high airtightness and causes lessdegassing so as to prevent exposure to air.

Next, structures of light-emitting elements are described with referenceto FIGS. 34A to 34C. Here, the case where a driving transistor is ann-channel thin film transistor is illustrated as an example, andcross-sectional structures of pixels are described.

It is acceptable as long as light-emitting element has a transparentelectrode for at least one of an anode and a cathode in order to extractlight emission. There are light-emitting elements having the followingstructures: a top emission structure where a thin film transistor and alight-emitting element are formed over a substrate and light isextracted from a side opposite to the substrate; a bottom emissionstructure where light is extracted from the substrate side; and a dualemission structure where light is extracted from both the substrate sideand the side opposite to the substrate. This embodiment can be appliedto a light-emitting element with any of the emission structures.

FIG. 34A illustrates a light-emitting element having a top emissionstructure. FIG. 34A is a cross-sectional view of a pixel in the casewhere a driving transistor 821 is an n-channel thin film transistor andlight is emitted from a light-emitting element 822 to an anode 825 side.In FIG. 34A, a cathode 823 of the light-emitting element 822 iselectrically connected to the driving transistor 821, and alight-emitting layer 824 and the anode 825 are sequentially stacked overthe cathode 823. The cathode 823 may be formed using a conductivematerial that has a low work function and can reflect light (e.g., Ca,Al, CaF, MgAg, AlLi, or the like). The light-emitting layer 824 may beformed using either a single-layer structure or a stacked-layerstructure of a plurality of layers. In the case of using a plurality oflayers, an electron injection layer, an electron transport layer, alight-emitting layer, a hole transport layer, or a hole injection layerare stacked in this order over the cathode 823. Note that all theselayers are not necessarily provided. The anode 825 is formed using alight-transmitting conductive layer which transmits light, for example,a light-transmitting conductive layer of indium oxide containingtungsten oxide, indium zinc oxide containing tungsten oxide, indiumoxide containing titanium oxide, indium tin oxide containing titaniumoxide, indium tin oxide (ITO), indium zinc oxide, indium tin oxide towhich silicon oxide is added, or the like may be used.

A region where the light-emitting layer 824 is sandwiched between thecathode 823 and the anode 825 corresponds to the light-emitting element822. In the case of the pixel illustrated in FIG. 34A, light is emittedfrom the light-emitting element 822 to the anode 825 side as indicatedby an outlined arrow.

FIG. 34B illustrates a light-emitting element having a bottom emissionstructure. FIG. 34B is a cross-sectional view of a pixel in the casewhere a driving transistor 831 is an n-channel thin film transistor andlight is emitted from a light-emitting element 822 to a cathode 833side. In FIG. 34B, the cathode 833 of the light-emitting element 822 isformed over a light-transmitting conductive layer 837 which iselectrically connected to the driving transistor 831, and alight-emitting layer 834 and an anode 835 are sequentially stacked overthe cathode 833. Note that when the anode 835 has light-transmittingproperties, a shielding layer 836 for reflecting or shielding light maybe formed so as to cover the anode 835. In a manner similar to that ofthe case of FIG. 34A, the cathode 833 may be a conductive layer formedusing a material having a low work function, and a known material can beused therefor. Note that the thickness is set so that light can betransmitted therethrough (preferably about 5 nm to 30 nm inclusive). Forexample, aluminum having a thickness of 20 nm can be used as the cathode833. In a manner similar to that of the case of FIG. 34A, thelight-emitting layer 834 can be formed using either a single-layerstructure or a stacked-layer structure of a plurality of layers.Although the anode 835 does not need to be able to transmit light, theanode 835 can be formed using a light-transmitting conductive materialin a manner similar to that of FIG. 34A. The light-shielding layer 836can be formed using, for example, a metal layer which reflects light, orthe like. However, the present invention is not limited to this. Forexample, a resin to which a black pigment is added can also be used.

A region where the light-emitting layer 834 is sandwiched between thecathode 833 and the anode 835 corresponds to the light-emitting element822. In the case of the pixel illustrated in FIG. 34B, light is emittedfrom the light-emitting element 822 to the cathode 833 side as indicatedby an outlined arrow.

Next, FIG. 34C illustrates a light-emitting element having a dualemission structure. In FIG. 34C, a cathode 843 of a light-emittingelement 822 is formed over a light-transmitting conductive layer 847which is electrically connected to a driving transistor 841, and alight-emitting layer 844 and an anode 845 are sequentially stacked overthe cathode 843. In a manner similar to that of FIG. 34A, the cathode843 can be formed using a material having a low work function, and aknown material can be used therefor. Note that the thickness is set sothat light is transmitted therethrough. For example, an aluminum layerformed to a thickness of about 20 nm can be used as the cathode 843. Ina manner similar to that of FIG. 34A, the light-emitting layer 844 maybe formed using either a single-layer structure or a stacked-layerstructure of a plurality of layers. In a manner similar to that of FIG.34A, the anode 845 can be formed using a light-transmitting conductivematerial.

A region where the cathode 843, the light-emitting layer 844, and theanode 845 overlap with each other corresponds to the light-emittingelement 822. In the case of the pixel illustrated in FIG. 34C, light isemitted from the light-emitting element 822 to both the anode 845 sideand the cathode 843 side as indicated by outlined arrows.

Note that although an organic EL element is described here as alight-emitting element, an inorganic EL element can also be used as alight-emitting element.

Note that although the example in which a thin film transistor (adriving transistor) which controls driving of a light-emitting elementis directly connected to the light-emitting element is described in thisembodiment, a transistor for controlling current may be connectedbetween the driving transistor and the light-emitting element.

Note that the light-emitting device described in this embodiment is notlimited to the structures illustrated in FIGS. 34A to 34C, and can bemodified in various ways.

Through the above steps, the light-emitting device can be manufactured.A thin film transistor manufactured according to any of the methodsdescribed in the above embodiments is used as the thin film transistorincluded in the light-emitting device of this embodiment. Therefore,because the thin film transistor has a low off current and excellentelectric characteristics, the light-emitting device described in thisembodiment can have high contrast and high visibility.

Embodiment 7

Next, a mode of a display panel which is incorporated in the displaydevice described in Embodiment 5 or a light-emitting panel which isincorporated in the light-emitting device described in Embodiment 6 isdescribed with reference to drawings.

In a liquid crystal display device or light-emitting device which is oneembodiment of the present invention, a signal line driver circuit and ascan line driver circuit which are connected to a pixel portion arepreferably provided over a different substrate (e.g., a semiconductorsubstrate, an SOI substrate, or the like) and connected. However, thesignal line driver circuit and the scan line driver circuit may beformed over the same substrate as a pixel circuit, instead of separatelyproviding the signal line driver circuit and the scan line drivercircuit.

Note that a connection method of a substrate which is separately formedis not particularly limited, and a known COG method, a wire bondingmethod, a TAB method, or the like can be used. Further, a connectionposition is not particularly limited to a certain position as long aselectric connection is possible. Moreover, a controller, a CPU, amemory, and the like may be formed separately and connected to the pixelcircuit.

FIG. 35 is a block diagram of a display device. The display deviceillustrated in FIG. 35 includes a pixel portion 850 including aplurality of pixels each provided with a display element, a scan linedriver circuit 852 which selects each pixel, and a signal line drivercircuit 853 which controls input of a video signal to a selected pixel.

Note that the display device which is one embodiment of the presentinvention is not limited to the structure illustrated in FIG. 35. Thatis, a signal line driver circuit used in this embodiment is not limitedto a structure including only a shift register and an analog switch. Inaddition to the shift register and the analog switch, another circuitsuch as a buffer, a level shifter, or a source follower may be included.Further, the shift register and the analog switch are not necessarilyprovided. For example, another circuit such as a decoder circuit bywhich a signal line can be selected may be used instead of the shiftregister, or a latch or the like may be used instead of the analogswitch.

The signal line driver circuit 853 illustrated in FIG. 35 includes ashift register 854 and an analog switch 855. A clock signal (CLK) and astart pulse signal (SP) are input to the shift register 854. When theclock signal (CLK) and the start pulse signal (SP) are input, a timingsignal is generated in the shift register 854 and the timing single isinput into the analog switch 855.

In addition, a video signal is supplied to the analog switch 855. Theanalog switch 855 samples the video signal in accordance with the inputtiming signal and supplies the sampled video signal to a signal line ofthe next stage.

The scan line driver circuit 852 illustrated in FIG. 35 includes a shiftregister 856 and a buffer 857. The scan line driver circuit 852 may alsoinclude a level shifter in some cases. In the scan line driver circuit852, when the clock signal (CLK) and the start pulse signal (SP) areinput to the shift register 856, a selection signal is produced. Theproduced selection signal is buffered and amplified by the buffer 857,and the buffered and amplified signal is supplied to a correspondingscan line. Gates of transistors in pixels of one line are connected tothe scan line. Further, because the transistors in the pixels of oneline should be turned on at the same time in the operation, a bufferthrough which large current can flow is used as the buffer 857.

In a full-color display device, when video signals corresponding to R(red), G (green), and B (blue) are sequentially sampled and supplied toa corresponding signal line, the number of terminals for connecting theshift register 854 and the analog switch 855 corresponds toapproximately ⅓ of the number of terminals for connecting the analogswitch 855 and the signal line of the pixel portion 850. Accordingly,when the analog switch 855 and the pixel portion 850 are formed over thesame substrate, the number of terminals used for connecting substrateswhich are separately formed can be suppressed compared to the case wherethe analog switch 855 and the pixel portion 850 are formed overdifferent substrates. Thus, occurrence probability of defectiveconnection can be suppressed, and thus yield can be improved.

Note that although the scan line driver circuit 852 in FIG. 35 includesthe shift register 856 and the buffer 857, the present invention is notlimited to this. The scan line driver circuit 852 may be formed usingonly the shift register 856.

Note that the structures of the signal line driver circuit and the scanline driver circuit are not limited to the structure illustrated in FIG.35, which are merely one mode of the display device in this embodiment.

Next, appearance and cross sections of a liquid crystal display panel,which is one mode of the liquid crystal display device in thisembodiment, and a light-emitting panel are described with reference toFIGS. 36A and 36B and FIGS. 37A and 37B. FIG. 36A is a top view of apanel, in which a transistor 910 having a microcrystalline semiconductorlayer and a liquid crystal element 913 which are formed over a firstsubstrate 901 are sealed between the first substrate 901 and a secondsubstrate 906 by a sealant 905. FIG. 36B is a cross-sectional view takenalong the line K-L in FIG. 36A. FIGS. 37A and 37B illustrate alight-emitting device. Note that only portions which are different fromthose in FIGS. 36A and 36B are denoted by reference numerals in FIGS.37A and 37B.

The sealant 905 is provided so as to surround a pixel portion 902 and ascan line driver circuit 904 which are provided over the first substrate901. The second substrate 906 is provided over the pixel portion 902 andthe scan line driver circuit 904. Thus, the pixel portion 902 and thescan line driver circuit 904 are sealed together with a liquid crystallayer 908 or a filler 931 by the first substrate 901, the sealant 905,and the second substrate 906. Further, a signal line driver circuit 903is mounted on a region over the first substrate 901, which is differentfrom the region surrounded by the sealant 905. Note that the signal linedriver circuit 903 is formed with transistors having a polycrystallinesemiconductor layer formed over a separately prepared substrate. Notethat although an example in which the signal line driver circuit 903including a transistor using a polycrystalline semiconductor layer isattached to the first substrate 901 is described in this embodiment, asignal line driver circuit may be formed using a transistor using asingle crystalline semiconductor and attached to the first substrate901. FIG. 36B illustrates a transistor 909 formed using apolycrystalline semiconductor layer, which is included in the signalline driver circuit 903.

The pixel portion 902 provided over the first substrate 901 includes aplurality of transistors, and in FIG. 36B, a transistor 910 included inthe pixel portion 902 is exemplified. The scan line driver circuit 904also includes a plurality of transistors, and in FIG. 36B, thetransistor 909 included in the signal line driver circuit 903 isexemplified. In this embodiment, as for the light-emitting device, acase where the transistor 910 is a driving transistor is described, butthe transistor 910 may be a current control transistor or an erasingtransistor in the light-emitting device. The transistor 910 correspondsto a transistor using a microcrystalline semiconductor layer.

A pixel electrode 912 included in the liquid crystal element 913 iselectrically connected to the transistor 910 via a wiring 918. Furtherthe wiring 918 is electrically connected to a lead wiring 914. A counterelectrode 917 of the liquid crystal element 913 is formed on the secondsubstrate 906. A portion where the pixel electrode 912, the counterelectrode 917, and the liquid crystal layer 908 overlap with each othercorresponds to the liquid crystal element 913.

In addition, a pixel electrode included in a light-emitting element 930is electrically connected to a source electrode or a drain electrode ofthe transistor 910 through a wiring. In addition, in this embodiment, acommon electrode of the light-emitting element 930 and alight-transmitting conductive material layer are electrically connected.Note that the structure of the light-emitting element 930 is not limitedto the structure illustrated in this embodiment. The structure of thelight-emitting element 930 can be changed as appropriate in accordancewith a direction of light extracted from the light-emitting element 930,polarity of the transistor 910, or the like.

Note that as a material of each of the first substrate 901 and thesecond substrate 906, glass, metal (typically, stainless steel),ceramics, plastics, or the like can be used. As plastics, afiberglass-reinforced plastics (FRP) plate, a polyvinyl fluoride (PVF)film, a polyester film, an acrylic resin film, or the like can be used.Alternatively, a sheet in which aluminum foil is interposed between PVFfilms or polyester films can be used.

A spacer 911 is a bead spacer and is provided for controlling a distance(a cell gap) between the pixel electrode 912 and the counter electrode917. Note that a spacer obtained by selectively etching an insulatinglayer may be used. That is, a post spacer may be used.

A variety of signals (potentials) supplied to the pixel portion 902 andthe scan line driver circuit 904, and the signal line driver circuit 903which is formed separately are supplied from a flexible printed circuit(FPC) 907 through the lead wiring 914 and the lead wiring 915.

In this embodiment, a connection terminal 916 is formed using the sameconductive layer as the pixel electrode 912 included in the liquidcrystal element 913. Further, the lead wiring 914 and the lead wiring915 are formed using the same conductive layer as the wiring 918.

The connection terminal 916 is electrically connected to a terminalincluded in the FPC 907 through an anisotropic conductive layer 919.

Note that although not illustrated, the liquid crystal display deviceillustrated in this embodiment includes alignment films and polarizingplates, and may also include a color filter, a light-shielding layer, orthe like.

Although the variety of signals (potentials) supplied to the scan linedriver circuit 904, the pixel portion 902, and the signal line drivercircuit 903 which is formed separately are supplied from the FPC 907through the lead wiring 914 and the lead wiring 915.

In this embodiment, the connection terminal 916 is formed using the sameconductive layer as the pixel electrode included in the light-emittingelement 930. However, this is not a limiting example.

Note that the second substrate which is located in a direction fromwhich light from the light-emitting element 930 is extracted should havea light-transmitting property. In this case, a substrate formed using alight-transmitting material, such as a glass substrate, a plasticsubstrate, a polyester film, or an acrylic film is used.

As the filler 931, as well as an inert gas such as nitrogen or argon, anultraviolet curable resin, a thermosetting resin, or the like can beused. For example, polyvinyl chloride (PVC), acrylic, polyimide, anepoxy resin, a silicone resin, polyvinyl butyral (PVB), ethylene vinylacetate (EVA), or the like can be used. In this embodiment, for example,nitrogen may be used.

An optical film such as a polarizing plate, a circular polarizing plate(including an elliptical polarizing plate), a retardation plate (a λ/4plate, a λ/2 plate), or a color filter may be provided as appropriateover a light-emitting surface of the light-emitting element. Further, ananti-reflection layer may be provided over a polarizing plate or acircular polarizing plate.

This embodiment can be combined with any of the structures described inthe other embodiments.

Embodiment 8

As described in the above embodiments, an active matrix display modulecan be manufactured. Note that a display panel provided with an FPC iscalled a display module. That is, one embodiment of the presentinvention can be applied to any of electronic devices in which such anactive matrix display module is incorporated in a display portion.Examples of such electronic devices are cameras such as video camerasand digital cameras, head-mounted displays (goggle-type displays), carnavigation systems, projectors, car stereos, personal computers,portable information terminals (e.g., mobile computers, mobile phones,or electronic books), and the like. FIGS. 38A to 38C illustrate examplesof such electronic devices.

FIG. 38A illustrates a television set. A television set can be completedby incorporating a display module in a housing, as illustrated in FIG.38A. A main screen 953 is formed using the display module, and a speakerportion 959, operation switches, and the like are provided as itsaccessory equipment.

As illustrated in FIG. 38A, a display panel 952 using a display elementis incorporated in a housing 951. When a receiver 955 is used, includingreception of general TV broadcast, communication of information can alsobe performed in one way or in two ways by connection to a wired orwireless communication network through a modem 954. The television setcan be operated by switches incorporated in the housing or by a remotecontroller 956. A display portion 957 displaying information to beoutput may also be provided in this remote controller 956.

In addition, in the television set, a structure for displaying achannel, sound volume, or the like may be added by forming a subscreen958 with a second display panel in addition to the main screen 953. Inthis structure, the main screen 953 may be formed with a liquid crystaldisplay panel having a wide viewing angle, and the subscreen 958 may beformed with a liquid crystal display panel capable of displaying withlow power consumption. In addition, when the subscreen may be a liquidcrystal display panel capable of flashing on and off, power consumptioncan be decreased. Further, power consumption can also reduced by using alight-emitting device for the subscreen.

FIG. 39 is a block diagram illustrating a structure of a television setwhich can be applied to the television set illustrated in FIG. 38A. Apixel portion 971 is formed over a display panel. A signal line drivercircuit 972 and a scan line driver circuit 973 may be connected witheach other as described in any of the other embodiments.

As structures of other external circuits, a video signal amplifiercircuit 975 amplifying a video signal among signals received by a tuner974, a video signal processing circuit 976 converting signals outputfrom the video signal amplifier circuit 975 into chrominance signalscorresponding to respective colors of red, green, and blue, a controlcircuit 977 for converting the video signal into a signal which meetsinput specifications of a driver IC, and the like are provided on aninput side of the video signal. The control circuit 977 outputs signalsto both a scan line side and a signal line side. In the case of digitaldriving, a signal dividing circuit 978 may be provided on the signalline side and an input digital signal may be divided into m pieces to besupplied.

Among the signals received by the tuner 974, an audio signal istransmitted to an audio signal amplifier circuit 979, and output thereofis supplied to a speaker 983 through an audio signal processing circuit980. A control circuit 981 receives control information on a receivingstation (receiving frequency) or sound volume from an input portion 982and transmits the signal to the tuner 974 or the audio signal processingcircuit 980.

The above-described television set which is one embodiment of thepresent invention can have a high contrast ratio, less unevenness indisplay, and low power consumption.

Needless to say, the present invention is not limited to the televisionset, and can be applied to various uses particularly as a large displaymedium such as an information display board at a train station, anairport, or the like, or an advertisement display board on the street,as well as a monitor of a personal computer. These electronic deviceswhich are one embodiment of the present invention can have a highcontrast ratio, less unevenness in display, and low power consumption.

FIG. 38B illustrates an example of a mobile phone. The mobile phoneincludes a housing 961, a display portion 962, an operation portion 963,and the like. The display panel or the like described in any of theabove embodiments is employed for the display portion 962, so that themobile phone can have a high contrast ratio, less unevenness in display,and low power consumption.

FIG. 38C illustrates an example of a portable computer. The portablecomputer includes a housing 966, a display portion 967, and the like.The display panel or the like described in any of the above embodimentsis employed for the display portion 967, so that the portable computercan have a high contrast ratio, less unevenness in display, and lowpower consumption.

This application is based on Japanese Patent Application serial no.2008-228567 filed with Japan Patent Office on Sep. 5, 2008, the entirecontents of which are hereby incorporated by reference.

1. A method for manufacturing a thin film transistor, comprising thesteps of: forming a back channel portion in the thin film transistor byconducting etching using a resist mask; removing the resist mask; andetching a superficial part of the back channel portion using a nitrogengas or a tetrafluoromethane gas.
 2. The method for manufacturing a thinfilm transistor according to claim 1, wherein the resist mask is removedby a remover solution containing alkylbenzene sulfonate.
 3. The methodfor manufacturing a thin film transistor according to claim 1, whereinthe superficial part of the back channel portion is etched with bias notapplied in a direction perpendicular to a substrate over which the thinfilm transistor is formed.
 4. The method for manufacturing a thin filmtransistor according to claim 1, wherein the superficial part of theback channel portion is etched using pulsed discharge.
 5. A method formanufacturing a thin film transistor, comprising the steps of: forming aback channel portion in the thin film transistor by conducting etchingusing a resist mask; removing the resist mask using a chemical solutioncontaining a hydrophilic group including sulfur; and etching asuperficial part of the back channel portion using a nitrogen gas or atetrafluoromethane gas so that a concentration of sulfur which exists inthe back channel portion is less than or equal to a detection limit ofsecondary ion mass spectrometry.
 6. The method for manufacturing a thinfilm transistor according to claim 5, wherein the chemical solutioncontaining a hydrophilic group including sulfur is a remover solutioncontaining alkylbenzene sulfonate.
 7. The method for manufacturing athin film transistor according to claim 5, wherein the superficial partof the back channel portion is etched with bias not applied in adirection perpendicular to a substrate over which the thin filmtransistor is formed.
 8. The method for manufacturing a thin filmtransistor according to claim 5, wherein the superficial part of theback channel portion is etched using pulsed discharge.
 9. A method formanufacturing a thin film transistor, comprising the steps of: forming agate insulating layer, a semiconductor layer, and an impuritysemiconductor layer over a gate electrode layer; forming a first resistmask selectively over the impurity semiconductor layer; etching thesemiconductor layer and the impurity semiconductor layer so that anisland-shaped semiconductor layer at least part of which overlaps withthe gate electrode layer is formed; removing the first resist mask;forming a conductive layer over the gate insulating layer and theisland-shaped semiconductor layer; forming a second resist maskselectively over the conductive layer; etching the conductive layer sothat source and drain electrodes are formed; etching the impuritysemiconductor layer of the island-shaped semiconductor layer with thesecond resist mask left so that part of the semiconductor layer isexposed and a back channel portion is formed; removing the second resistmask using a chemical solution containing a hydrophilic group includingsulfur; and etching a superficial part of the back channel portion usinga nitrogen gas or a tetrafluoromethane gas with the source and drainelectrodes used as masks so that a concentration of sulfur which existsin the back channel portion is less than or equal to a detection limitof secondary ion mass spectrometry.
 10. The method for manufacturing athin film transistor according to claim 9, wherein the chemical solutioncontaining a hydrophilic group including sulfur is a remover solutioncontaining alkylbenzene sulfonate.
 11. The method for manufacturing athin film transistor according to claim 9, wherein the superficial partof the back channel portion is etched with bias not applied in adirection perpendicular to a substrate over which the thin filmtransistor is formed.
 12. The method for manufacturing a thin filmtransistor according to claim 9, wherein the superficial part of theback channel portion is etched using pulsed discharge.
 13. The methodfor manufacturing a thin film transistor according to claim 9, whereinthe semiconductor layer includes a stacked layer of a microcrystallinesemiconductor layer and an amorphous semiconductor layer, and whereinthe amorphous semiconductor layer is provided on a side of thesemiconductor layer with which the impurity semiconductor layer is incontact.
 14. A method for manufacturing a display device, comprising thesteps of: forming a pixel electrode which is connected to the sourceelectrode or the drain electrode of the thin film transistormanufactured by the method according to claim 9, wherein the pixelelectrode is formed using a conductive material having alight-transmitting property.
 15. A method for manufacturing a thin filmtransistor, comprising the steps of: forming a gate insulating layer, asemiconductor layer, and an impurity semiconductor layer over a gateelectrode layer; forming a first resist mask selectively over theimpurity semiconductor layer; etching the semiconductor layer and theimpurity semiconductor layer so that an island-shaped semiconductorlayer at least part of which overlaps with the gate electrode layer isformed; removing the first resist mask; forming a conductive layer overthe gate insulating layer and the island-shaped semiconductor layer;forming a second resist mask selectively over the conductive layer;etching the conductive layer so that source and drain electrodes areformed; removing the second resist mask using a chemical solutioncontaining a hydrophilic group including sulfur; etching the impuritysemiconductor layer of the island-shaped semiconductor layer with thesource and drain electrodes used as masks so that part of thesemiconductor layer is exposed and a back channel portion is formed; andetching a superficial part of the back channel portion using a nitrogengas or a tetrafluoromethane gas so that a concentration of sulfur whichexists in the back channel portion is less than or equal to a detectionlimit of secondary ion mass spectrometry.
 16. The method formanufacturing a thin film transistor according to claim 15, wherein thechemical solution containing a hydrophilic group including sulfur is aremover solution containing alkylbenzene sulfonate.
 17. The method formanufacturing a thin film transistor according to claim 15, wherein thesuperficial part of the back channel portion is etched with bias notapplied in a direction perpendicular to a substrate over which the thinfilm transistor is formed.
 18. The method for manufacturing a thin filmtransistor according to claim 15, wherein the superficial part of theback channel portion is etched using pulsed discharge.
 19. The methodfor manufacturing a thin film transistor according to claim 15, whereinthe semiconductor layer includes a stacked layer of a microcrystallinesemiconductor layer and an amorphous semiconductor layer, and whereinthe amorphous semiconductor layer is provided on a side of thesemiconductor layer with which the impurity semiconductor layer is incontact.
 20. A method for manufacturing a display device, comprising thesteps of: forming a pixel electrode which is connected to the sourceelectrode or the drain electrode of the thin film transistormanufactured by the method according to claim 15, wherein the pixelelectrode is formed using a conductive material having alight-transmitting property.
 21. A method for manufacturing a thin filmtransistor, comprising the steps of: forming a gate insulating layer, asemiconductor layer, an impurity semiconductor layer, and a conductivelayer over a gate electrode layer; forming a first resist mask having adepression portion selectively over the conductive layer; etching thesemiconductor layer, the impurity semiconductor layer, and theconductive layer so that an island-shaped semiconductor layer is formedand a conductive layer is formed over the semiconductor layer and sothat the depression portion of the first resist mask is made to reachthe conductive layer, whereby a second resist mask is formed; etchingthe conductive layer so that source and drain electrodes are formed;etching the impurity semiconductor layer of the island-shapedsemiconductor layer so that part of the semiconductor layer is exposedand a back channel portion is formed; removing the second resist maskusing a chemical solution containing a hydrophilic group includingsulfur; and etching a superficial part of the back channel portion usinga nitrogen gas or a tetrafluoromethane gas with the source and drainelectrodes used as masks so that a concentration of sulfur which existsin the back channel portion is less than or equal to a detection limitof secondary ion mass spectrometry.
 22. The method for manufacturing athin film transistor according to claim 21, wherein the chemicalsolution containing a hydrophilic group including sulfur is a removersolution containing alkylbenzene sulfonate.
 23. The method formanufacturing a thin film transistor according to claim 21, wherein thesuperficial part of the back channel portion is etched with bias notapplied in a direction perpendicular to a substrate over which the thinfilm transistor is formed.
 24. The method for manufacturing a thin filmtransistor according to claim 21, wherein the superficial part of theback channel portion is etched using pulsed discharge.
 25. The methodfor manufacturing a thin film transistor according to claim 21, whereinthe semiconductor layer includes a stacked layer of a microcrystallinesemiconductor layer and an amorphous semiconductor layer, and whereinthe amorphous semiconductor layer is provided on a side of thesemiconductor layer with which the impurity semiconductor layer is incontact.
 26. A method for manufacturing a display device, comprising thesteps of: forming a pixel electrode which is connected to the sourceelectrode or the drain electrode of the thin film transistormanufactured by the method according to claim 21, wherein the pixelelectrode is formed using a conductive material having alight-transmitting property.
 27. A method for manufacturing a thin filmtransistor, comprising the steps of: forming a gate insulating layer, asemiconductor layer, an impurity semiconductor layer, and a conductivelayer over a gate electrode layer; forming a first resist mask having adepression portion selectively over the conductive layer; etching thesemiconductor layer, the impurity semiconductor layer, and theconductive layer so that an island-shaped semiconductor layer is formedand a conductive layer is formed over the semiconductor layer and sothat the depression portion of the first resist mask is made to reachthe conductive layer, whereby a second resist mask is formed; etchingthe conductive layer so that source and drain electrodes are formed;removing the second resist mask using a chemical solution containing ahydrophilic group including sulfur; etching the impurity semiconductorlayer of the island-shaped semiconductor layer so that part of thesemiconductor layer is exposed and a back channel portion is formed; andetching a superficial part of the back channel portion using a nitrogengas or a tetrafluoromethane gas with the source and drain electrodesused as masks so that a concentration of sulfur which exists in the backchannel portion is less than or equal to a detection limit of secondaryion mass spectrometry.
 28. The method for manufacturing a thin filmtransistor according to claim 27, wherein the chemical solutioncontaining a hydrophilic group including sulfur is a remover solutioncontaining alkylbenzene sulfonate.
 29. The method for manufacturing athin film transistor according to claim 27, wherein the superficial partof the back channel portion is etched with bias not applied in adirection perpendicular to a substrate over which the thin filmtransistor is formed.
 30. The method for manufacturing a thin filmtransistor according to claim 27, wherein the superficial part of theback channel portion is etched using pulsed discharge.
 31. The methodfor manufacturing a thin film transistor according to claim 27, whereinthe semiconductor layer includes a stacked layer of a microcrystallinesemiconductor layer and an amorphous semiconductor layer, and whereinthe amorphous semiconductor layer is provided on a side of thesemiconductor layer with which the impurity semiconductor layer is incontact.
 32. A method for manufacturing a display device, comprising thesteps of: forming a pixel electrode which is connected to the sourceelectrode or the drain electrode of the thin film transistormanufactured by the method according to claim 27, wherein the pixelelectrode is formed using a conductive material having alight-transmitting property.